We have proved that short cavity length and large coupling coefficient structure can increase the relaxation oscillation frequency of directly modulated 1.3mm DFB-LDs for 10Gb/s operation. The grating with large coupling coefficient can be made of high refractive index InGaAsP material (=narrow band gap energy material), which has to be fabricated in the n-type InP cladding layer to prevent large hole and electron accumulation in the grating layer. By using this grating, 1.3mm AlGaInAs quarter lambda phase shifted DFB-LDs successfully revealed excellent eye diagrams with over 10% margin for OC-192 mask at the temperature range of 25-95 deg.C. Furthermore, we newly propose multi-phase shifted gating to 10Gb/s quarter lambda phase-shifted DFB-LDs to suppress the deterioration of eye diagrams due to non-uniform longitudinal distribution of light intensity and carrier density.
We have proved that short cavity length and large optical feedback structure can improve the relaxation oscillation frequency (fr) of 1.3mm directly modulated LDs for 10Gb/s operation. By this improvement, 1.3mm InGaAsP l/4 phase shifted distributed-feedback LDs (l/4 DFB-LDs) and 1.3mm AlGaInAs Fabry-Perot (FP)-LDs successfully revealed excellent transmission with small power penalty of 0.6dB at 70 oC for +40ps/nm wavelength dispersion and 1.5dB at 85oC for +10ps/nm one, respectively. It has been also proved that 1.55mm electro-absorption modulator integrated with DFB-LDs (EAM DFB-LDs) with MQW absorption layers are more suitable for 100km transmission than those with bulk ones, which originates from the difference of extinction curves. Transmission characteristics using 100km SMF of 1.55mm EAM DFB-LD with an MQW absorption layer has been realized with power penalty of 1.3dB. These devices can cover all optical lines of various distances in metropolitan area networks.
Strained-layer MQW-DFB lasers at a wavelength of 1.3 micrometers operating from -40 degree(s)C to 85 degree(s)C without any coolers are demonstrated. On the basis of the leakage current analysis, a laser structure including the active layer and the current blocking layer is chosen to achieve low distortion over wide-temperature-range. Extremely low threshold current of 17 mA at 85 degree(s)C and operation current of 37 mA at 5 mW and 85 degree(s)C are obtained. The lasers realize low distortion of less than -50 dBc at 65 degree(s)C in 78-channel CSO measurements. Furthermore, a fabricated laser module with a coaxial package also achieved low CSO values of -55 dBc under 16-channel loading in the temperature range from -40 degree(s)C to 85 degree(s)C. This uncooled DFB laser module is very useful for return path application in CATV systems.
Minimum threshold current density (Jth) less than 2.OkA/cm2 is obtained at
optimum hole concentration in the Zn-doped cladding layer (NH) of 3"4x 1O'7ca3
in the AlGaInP laser diodes. At NM lower than optimum one, Jth increases
gradually due to poor electron confinement in the active layer. At NH higher than
optimum one, Jth also increases due to Zn diffusion from the Zn-doped cladding
layer to the active layer during epitaxial growth. One of the reasons is that Zn
atoms act as nonradiative recombination centers in the active layer. By
optimizing NH in the index guide AlGaInP laser diodes with 6u a width stripe,
threshold current of 4OmA and astigmatism smaller than 8 m are achieved.
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