Dr. Tomasz Swietlik Profile

Dr. Tomasz Swietlik

at Institute of High Pressure Physics

SPIE Involvement:

Author

Publications (8)

Proceedings Article | 14 March 2023 Presentation + Paper

Advances in 9xx nm edge-emitting high-power pulse laser diodes for LiDAR applications

C. Lauer, N. Kaufmann, A. Fröhlich, D. Schoke, A. Gocalinska, T. Swietlik, L. Fuchs, S. Pyka, M. Furitsch, M. Roth, S. Hein, S. Baumann, F. Eigenmann, P. Fuchs, J. Ebbecke, N. Steinbrück, J. Maric, B. Jentzsch, H. Halbritter, A. Gomez-Iglesias, M. Lermer, H. König, M. Behringer

Proceedings Volume 12403, 1240306 (2023) https://doi.org/10.1117/12.2648401

KEYWORDS: Emission wavelengths, Design and modelling, Epitaxy, Laser stabilization, LIDAR, Laser resonators, Pulsed laser operation, Semiconducting wafers, Waveguides

Read Abstract +

Proceedings Article | 21 February 2011 Paper

Next generation 8xx nm laser bars and single emitters

Uwe Strauss, Martin Müller, Tomasz Swietlik, Robin Fehse, Christian Lauer, Günther Grönninger, Harald König, Markus Keidler, Thierry Fillardet, Andreas Kohl, Michael Stoiber, Iris Scholl, Jens Biesenbach, Martina Baeumler, Helmer Konstanzer

Proceedings Volume 7918, 79180T (2011) https://doi.org/10.1117/12.874818

KEYWORDS: Semiconductor lasers, Laser applications, Continuous wave operation, Laser welding, High power lasers, Laser development, Luminescence, Pulsed laser operation, Laser marking, Mirrors

Read Abstract +

Semiconductor lasers with emission in the range 790 - 880 nm are in use for a variety of application resulting in different laser designs to fulfill requirements in output power, operation temperature and lifetimes. The output power is limited by self heating and catastrophic optical mirror damage at the laser facet (COMD). Now we present data on bars fabricated with our new facet technology, which enables us to double the maximum facet load. We present q-cw laser bar with 80% fill factor with increased power level to 350W in long term operation at 200μs and 100Hz. The COMD limit of the bar is as high as 680W. Using Quantel's optimized packaging stacks with 11 bars of 5mm widths are tested at up to 120A resulting over 66% power conversion efficiency at 1600W output power. Laser bars for continuous wave operation like 50% fill factor bars had an COMD limit of approx. 250W with conventional facet technology, the value is equivalent to 10W per 200μm emitter (conditions: 200μs). The new facet technology pushes the facet stability to 24W/emitter. The new process and an improved design enable us to shift continuous wave operation at 808nm from 100W to 150W/bar with lifetimes of several thousand hours at 30°C using DILAS mounting technology. Higher power is possible depending on lifetime requirements. The power conversion efficiency of the improved devices is as high as 62% at 200W cw. The next limitation of 8xxnm lasers is high temperature operation: Values of 60-80°C are common for consumer applications of single emitters. Therefore Osram developed a new epitaxial design which reduced the generation of bulk defects. The corresponding Osram single emitters operate at junction temperatures up to 95°C, a value which corresponds to 80°C heat sink temperature for lasers soldered on C-mount or 65°C case temperature for lasers mounted in TO can. Current densities of the single emitter broad area lasers are as high as 1.4kA/cm² at 850nm emission wavelength.

Proceedings Article | 28 February 2008 Paper

16 nm tuning range of blue InGaN laser diodes achieved by 200 K temperature increase

K. Komorowska, P. Wisniewski, R. Czernecki, P. Prystawko, M. Leszczynski, T. Suski, I. Grzegory, S. Porowski, S. Grzanka, T. Swietlik, L. Marona, T. Stacewicz, P. Perlin

Proceedings Volume 6894, 68940Q (2008) https://doi.org/10.1117/12.762871

KEYWORDS: Temperature metrology, Indium gallium nitride, Quantum wells, Gallium nitride, Semiconductor lasers, Laser damage threshold, Laser stabilization, Spectroscopes, Phonons, Copper

Read Abstract +

Proceedings Article | 8 February 2007 Paper

Comparison of optical properties of InGaN/GaN/AlGaN laser structures grown by MOVPE and MBE

T. Swietlik, C. Skierbiszewski, R. Czernecki, G. Franssen, P. Wisniewski, M. Leszczynski, I. Grzegory, P. Mensz, T. Suski, P. Perlin

Proceedings Volume 6473, 64731E (2007) https://doi.org/10.1117/12.700652

KEYWORDS: Gallium, Gallium nitride, Luminescence, Semiconductor lasers, Quantum wells, Aluminum, Optical properties, Plasma, Waveguides, Photons

Read Abstract +

Proceedings Article | 17 April 2006 Paper

Load dislocation density broad area high power CW operated InGaN laser diodes

P. Perlin, P. Wiśniewski, R. Czernecki, P. Prystawko, M. Leszczyński, T. Suski, I. Grzegory, L. Marona, T. Świetlik, K. Komorowska, S. Porowski

Proceedings Volume 6184, 61840H (2006) https://doi.org/10.1117/12.662912

KEYWORDS: Semiconductor lasers, Pulsed laser operation, Continuous wave operation, Gallium nitride, Indium gallium nitride, High power lasers, Gallium, Crystals, Aluminum

Read Abstract +

Proceedings Article | 22 February 2006 Paper

Broad-area high-power CW operated InGaN laser diodes

P. Wiśniewski, R. Czernecki, P. Prystawko, M. Maszkowicz, M. Leszczyński, T. Suski, I. Grzegory, S. Porowski, M. Marona, T. Świetlik, P. Perlin

Proceedings Volume 6133, 61330Q (2006) https://doi.org/10.1117/12.645049

KEYWORDS: Semiconductor lasers, Continuous wave operation, High power lasers, Gallium nitride, Indium gallium nitride, Laser damage threshold, Pulsed laser operation, Diodes, Gallium, Crystals

Read Abstract +

Proceedings Article | 1 April 2005 Paper

Properties of violet laser diodes grown on bulk GaN substrates

Piotr Perlin, Lucja Marona, Tomasz Swietlik, Michal Leszczynski, Pawel Prystawko, Przemyslaw Wisniewski, Robert Czernecki, Gijs Franssen, Szymon Grzanka, Grzegorz Kamler, Jola Borysiuk, Janusz Weyher, Izabella Grzegory, Tadeusz Suski, Sylwester Porowski, Till Riemann, Jurgen Christen

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.587040

KEYWORDS: Gallium nitride, Semiconductor lasers, Crystals, Laser crystals, Gallium, Electrons, Cladding, Pulsed laser operation, Aluminum, Continuous wave operation

Read Abstract +

Proceedings Article | 11 May 2004 Paper

High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates

Piotr Perlin, Mike Leszczynski, Pawel Prystawko, Robert Czernetzki, Przemek Wisniewski, Janusz Weyher, Grzegorz Nowak, Jola Borysiuk, Lucja Gorczyca, Tomasz Swietlik, Gijs Franssen, Agata Bering, Czeslaw Skierbiszewski, Izabella Grzegory, Tadek Suski, Sylwester Porowski

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.523580

KEYWORDS: Gallium nitride, Crystals, Semiconductor lasers, High power lasers, Diodes, Sapphire, Gallium, Temperature metrology, Mirrors, Etching

Read Abstract +

Showing 5 of 8 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years