InGaAsP/InP Multi Quantum Well (MQW) based rib waveguide (WG) multi-wavelength PIN type photodiodes (PD)
have been designed for Coarse Wavelength Division Multiplexing (CWDM) systems in which spatial bandgap tailoring
have been accomplished by using post growth Fluorine (F) implanted QW Intermixing (QWI) as the integration
mechanism. Two separate structures with different composition but same well widths are necessary to detect all CWDM
wavelengths in which a In0.5540Ga0.4460As0.9489P0.0511/InP (15nm/15nm) MQW structure has a 14 channel coverage
which spans from 1350-1610nm. The thicknesses of the i-MQW layer and different layers constituting the WG have
been optimized to give a maximum efficiency of 22%. A carrier tunneling time of 20ps along with the transit time
limited bandwidth of 86GHz gives a 3dB bandwidth of 43GHz by optimizing the i-MQW thickness and dopant
concentration of the different layers of the waveguide. For all 18 channels insertion loss of 0.4-23dB has been obtained
for a detection sensitivity of 21dB. Design issues related to the contact formation for extracting the photo-generated
microwave power in such photodiodes have been presented along with few fabrication details of the integration process.
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