Dr. Takeo Ishibashi Profile

Dr. Takeo Ishibashi

at Renesas Technology Corp

SPIE Involvement:

Author

Publications (12)

Proceedings Article | 1 April 2009 Paper

Defect reduction in non-topcoat resist by selective segregation removal step

Takuya Hagiwara, Mamoru Terai, Takeo Ishibashi, Tomofumi Miyauchi, Shinya Hori, Teruhiko Kumada, Tomoya Kumagai, Atsushi Sawano, Kosuke Doi, Takeshi Matsunobe, Naoki Man, Hirofumi Seki, Yusaku Tanahashi, Tetsuro Hanawa

Proceedings Volume 7273, 727324 (2009) https://doi.org/10.1117/12.813643

KEYWORDS: Polymers, Photoresist processing, Semiconducting wafers, Lithography, Coating, Photomasks, Chemical analysis, Critical dimension metrology, Fluorine, Scanners

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Proceedings Article | 4 December 2008 Paper

The first on-site evaluation of a new filter optimized for TARC and developer

Toru Umeda, Takeo Ishibashi, Atsushi Nakamura, Junichi Ide, Masaru Nagano, Koichi Omura, Shuichi Tsuzuki, Toru Numaguchi

Proceedings Volume 7140, 71402Z (2008) https://doi.org/10.1117/12.804672

KEYWORDS: Semiconducting wafers, Particles, Microfluidics, Scanning electron microscopy, Liquids, Photoresist processing, Semiconductors, Manufacturing, Optical filters, Standards development

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Proceedings Article | 26 March 2008 Paper

Improvements of adhesion and hydrophobicity of wafer bevel in water immersion lithography

Takeo Ishibash, Mamoru Terai, Takuya Hagiwara, Teruhiko Kumada, Tetsuro Hanawa, Yoko Takebe, Osamu Yokokoji, Tomoharu Fujiwara, Hiroshi Akiyama

Proceedings Volume 6923, 69231V (2008) https://doi.org/10.1117/12.771794

KEYWORDS: Semiconducting wafers, Coating, Silicon, Head-mounted displays, Immersion lithography, Manufacturing, Fluorine, Particles, Calcium, Prototyping

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Proceedings Article | 7 March 2008 Paper

Double patterning using dual spin-on Si containing layers with multilayer hard mask process

Mamoru Terai, Takeo Ishibashi, Masaaki Shinohara, Kazumasa Yonekura, Takuya Hagiwara, Tetsuro Hanawa, Teruhiko Kumada

Proceedings Volume 6924, 692420 (2008) https://doi.org/10.1117/12.771855

KEYWORDS: Etching, Double patterning technology, Silicon, Optical lithography, Coating, Photomasks, FT-IR spectroscopy, Photoresist processing, Silica, Scanning electron microscopy

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Proceedings Article | 2 April 2007 Paper

Development of high-performance multi-layer resist process with hardening treatment

Yoshiharu Ono, Takeo Ishibashi, Atsumi Yamaguchi, Tetsuro Hanawa, Masahiro Tadokoro, Kazunori Yoshikawa, Kazumasa Yonekura, Keiko Matsuda, Takeshi Matsunobe, Yasushi Fujii, Takeshi Tanaka

Proceedings Volume 6519, 65192O (2007) https://doi.org/10.1117/12.707615

KEYWORDS: System on a chip, Plasma treatment, Refractive index, Etching, Reflectivity, Carbon, Plasma, FT-IR spectroscopy, Raman spectroscopy, Photoresist processing

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Proceedings Article | 2 April 2007 Paper

Mechanism of immersion specific defects with high receding-angle topcoat

Mamoru Terai, Teruhiko Kumada, Takeo Ishibashi, Takuya Hagiwara, Tetsuro Hanawa, Tomoyuki Ando, Takeshi Matsunobe, Kazuyuki Okada, Yuichi Muraji, Kazuhiro Yoshikawa, Naoki Man

Proceedings Volume 6519, 65191S (2007) https://doi.org/10.1117/12.711058

KEYWORDS: Water, Bridges, Immersion lithography, Semiconducting wafers, Digital watermarking, Surface properties, Polymers, Chemical analysis, Defect inspection, Standards development

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Proceedings Article | 11 April 2006 Paper

Studies on immersion defects using mimic immersion experiments

Tetsuro Hanawa, Toshifumi Suganaga, Takeo Ishibashi, Shinroku Maejima, Koichiro Narimatsu, Kazuyuki Suko, Mamoru Terai, Teruhiko Kumada, Junichi Kitano

Proceedings Volume 6153, 61531O (2006) https://doi.org/10.1117/12.655568

KEYWORDS: Thin film coatings, Immersion lithography, Lithography, Semiconducting wafers, Scanners, Photoresist processing, Contamination, Defect inspection, Chemical analysis, Absorption

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Proceedings Article | 29 March 2006 Paper

Studies of the mechanism for immersion specific defects

Takeo Ishibashi, Tetsuro Hanawa, Toshifumi Suganaga, Koichiro Narimatsu, Kazuyuki Suko, Mamoru Terai, Teruhiko Kumada, Tomoyuki Ando

Proceedings Volume 6153, 61533I (2006) https://doi.org/10.1117/12.654756

KEYWORDS: Ions, Semiconducting wafers, Chemical analysis, Statistical analysis, Immersion lithography, Technetium, Contamination, Photoresist processing, Adsorption, Neodymium

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Proceedings Article | 29 March 2006 Paper

Newly developed RELACS materials and process for 65 nm nodes

Mamoru Terai, Teruhiko Kumada, Takeo Ishibashi, Tetsuro Hanawa, Noboru Satake, Yusuke Takano

Proceedings Volume 6153, 61532I (2006) https://doi.org/10.1117/12.651242

KEYWORDS: Semiconducting wafers, Lithography, Etching, Photoresist processing, Polymers, Materials processing, Resolution enhancement technologies, Resistance, Optical lithography, Photomasks

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Proceedings Article | 21 March 2006 Paper

Verification of optical proximity effect in immersion lithography

Toshifumi Suganaga, Shinroku Maejima, Tetsuro Hanawa, Takeo Ishibashi, Shuji Nakao, Seiichiro Shirai, Koichiro Narimatsu, Kazuyuki Suko, Kenichi Shiraishi, Yuki Ishii, Tomoyuki Ando, Katsumi Ohmori

Proceedings Volume 6154, 61544K (2006) https://doi.org/10.1117/12.655526

KEYWORDS: Immersion lithography, Technetium, Lithography, Resonance energy transfer, Polymers, Manufacturing, Scanners, Scanning electron microscopy, Optics manufacturing, Optical coatings

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Proceedings Article | 12 June 2003 Paper

Below 70-nm contact hole pattern with RELACS process on ArF resist

Mamoru Terai, Toshiyuki Toyoshima, Takeo Ishibashi, Shinji Tarutani, Kiyohisa Takahashi, Yusuke Takano, Hatsuyuki Tanaka

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485167

KEYWORDS: Photoresist processing, Lithography, Semiconducting wafers, Image processing, Photomasks, Scanning electron microscopy, Polymers, Resolution enhancement technologies, Optical lithography, 193nm lithography

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Proceedings Article | 23 June 2000 Paper

Advanced microlithography process with chemical shrink technology

Takashi Kanda, Hatsuyuki Tanaka, Yoshiaki Kinoshita, Natsuo Watase, Ronald Eakin, Takeo Ishibashi, Toshiyuki Toyoshima, Naoki Yasuda, Mikihiro Tanaka

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388374

KEYWORDS: Coating, Diffusion, Photoresist processing, Polymers, Optical lithography, Chemistry, Lithography, Chemical reactions, Photoresist materials, Resolution enhancement technologies

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Mitsubishi Electric Corporation (MELCO) has developed an advanced microlithographic process for producing 0.1 micrometer contact holes (CH). A chemical shrink technology, RELACS^TM (Resolution Enhancement Lithography Assisted by Chemical Shrink), utilizes the crosslinking reaction catalyzed by the acid component existing in a predefined resist pattern. This 'RELACS^TM' process is a hole shrinking procedure that includes simple coating, baking, and rinse steps applied after conventional photolithography. This paper examines the process parameters affecting shrinkage of CH size. We subsequently evaluated the dependency of CH shrinkage on resist formulation. We conducted investigations of shrink magnitude dependency on each process parameter. (1) Photoresist lithography process: CH size, exposure dose, post development bake temperature. (2) AZ^R R200 [a product of Clariant (Japan) K.K.] RELACS^TM process: Soft bake temperature, film thickness, mixing bake temperature (diffusion bake temperature), etc. We found that the mixing bake condition (diffusion bake temperature) is one of most critical parameters to affect the amount of CH shrink. Additionally, the structural influence of photoacid generators on shrinkage performance was also investigated in both high and low activation energy resist systems. The shrinkage behavior by the photoacid generator of the resist is considered in terms of the structure (molecular volume) of the photogenerated acid and its acidity (pKa). The results of these studies are discussed in terms of base polymer influence on shrinkage performance and tendency. Process impact of the structure and acidity of the photogenerated acid is explored. Though the experimental acetal type KrF positive resist (low activation energy system) can achieve around 0.1 micrometer CH after RELACS^TM processing under the optimized condition, the experimental acrylate type positive resist (high activation energy system) showed less shrinkage under the same process condition. The shrinkage performance of RELACS^TM process largely depends on the resist chemistry used as the underlying layer. Further, shrinkage degree can be controlled by process optimization even for the high activation energy type photoresist.

Showing 5 of 12 publications

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