KEYWORDS: Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Line edge roughness, Line width roughness, Scanning electron microscopy, Electron beam lithography, Photoresist processing, Semiconductors, Electron beams
For improving resist performance, we have developed new Low-Molecular resists for which the substituted position
and number of protecting group have no dispersion for controlling the chemical properties, such as solubility rate to
alkaline developer. And we evaluated their Electron beam (EB) and Extreme Ultraviolet (EUV) patterning performance.
The EUV lithographic evaluation of these resists was carried out at SFET (small field exposure tool) in Semiconductor
Leading Edge Technologies Inc. (Selete). Newly synthesized resists have shown high performance of sensitivity and
resolution under EB or EUV exposures.
In this paper, we outline the design of new low molecular weight resists. The material properties, EUV outgassing
analysis and the patterning capability of these newly synthesized low molecular weight resists are reported.
KEYWORDS: Lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Line edge roughness, Line width roughness, Electron beam lithography, Scanning electron microscopy, Photoresist processing, Electron beams, Silicon
We will discuss the effect of protecting group distribution on lithographic performance with Cyclic-Low-Molecular
(CLM) resists which have some or no distribution of the protecting groups. By comparing the result of CLM resist with
distribution of the protecting group and CLM resist with no distribution of that, the latter gave high resolution of sub
30nm hp by Electron beam (EB) Lithography.
And also we have developed new CLM-resist for which the substituted position and number of protecting group have
no dispersion, and evaluated their EB and Extreme Ultraviolet (EUV) patterning performance. The EUV lithographic
evaluation of the novel low molecular weight amorphous resists 'CLMC-Resist' was carried out at SFET (small field
exposure tool) in Semiconductor Leading Edge Technologies Inc. (Selete). Newly synthesized resists have shown high
performance of sensitivity and resolution under EB or EUV exposures.
In this paper, we outline the design of new molecular weight resists. The material properties, photochemistry and the
patterning capability of these newly synthesizes low molecular weight resists are reported.
Low molecular weight materials that form a stable glass above room temperature offer several advantages comparison
with traditional linear polymers as patterning feature size decreases. Low molecular weight amorphous materials that are
free from chain entanglements with smaller molecular size and high density of sterically congested peripheral molecules
are expected to reduce the variations in line edge roughness (LER) at smaller feature dimensions. In addition, the small
uniform molecular size offers excellent processability, flexibility, transparency and uniform dissolution properties based
on elemental composition.
The evaluation of the novel low molecular weight amorphous resists was carried out both at NewSUBARU
synchrotron facility of University of Hyogo, and at ASET EUV process technology research lab. in Japan.
Newly synthesizes low molecular weight resist has shown high performance of sensitivity and resolution under EB or
EUV exposures and also etch resistance.
In this paper, we outline the design and synthesis of new molecular weight resists. The material properties,
photochemistry and the patterning capability of these newly synthesizes low molecular weight resist will be discussed.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.