Extreme ultraviolet lithography (EUVL) enables integrated circuit (IC) industry to manufacture chips with increased transistor density per volume unit, so the Moore’s law remains true to date. To support the endless requirement of reducing critical dimension (CD), chemically amplified resist (CAR) has been designed to address the resolution, line width roughness, and sensitivity (RLS) in nanoscale level. However, a good Litho performance from an EUV photoresist may not always be transferred into a good etch performance, limiting the stochastic defects after patten transfer is the key to achieve a good after etch inspection (AEI) defectivity. In this paper, we report the EUV photoresist design strategies to acquire good AEI defectivity with the understanding of CAR’s property in a defined pattern transfer scheme with special focus on small molecule in photoresist. The CAR’s Litho performance and the corelated etch performance will be discussed, the component etch rate and its correlation to photoresist etch performance will be covered.
Chemically amplified resists (CAR) enable the transition of extreme ultraviolet (EUV) lithography to high-volume manufacture (HVM). Novel photoresists continue to be designed to meet the simultaneous improvement of resolution, line width roughness, and sensitivity (RLS) trade-off. The absorption of EUV photons in the photoresist film leads to emission of primary electrons to form secondary electrons by inelastic scattering events which in turn leads to the activation of the photoacid generator compound. A unique challenge for the use of CAR in EUV lithography is their poor absorption at 13.5nm wavelength. Understanding the photoresist EUV absorption impact on lithographic performance parameters is critical for photoresist design. In this study, we designed photoresist polymers with tuned EUV absorption coefficients by incorporating EUV absorption group(s) onto different CAR polymers. The effect of the EUV absorption increase on polymer properties as well as on resist lithographic performance will be presented.
The drive toward tighter pitch and higher density integrated circuits requires continual advancement in lithography. Advanced photolithography tools use extreme ultraviolet (EUV) light with a wavelength of 13.5nm. The high energy nature of EUV light generates secondary electrons in the photoresist that are responsible for the photochemistry that induces the solubility switch. This distinct mechanism has provided the driving force for the development of new photoresists that are sensitive to EUV and highly reactive toward secondary electrons. Despite the considerable change in acid generation mechanism going from DUV to EUV, chemically amplified photoresists continue to be leading photoresist candidates for new process nodes at low NA EUV (0.33 NA) and their use is expected to extend into early high NA (0.55 NA). Herein the after-developer defects (ADI) and EUV P36 LS trench printing performance of a series of chemically amplified photoresists (CAR) with distinct chemistry developed specifically for EUV lithography are compared. In particular, the relationship of different leaving group chemistries and polymer manufacturing processes on stochastic defectivity is explored as well as the connection to photoresist polymer hydrophobicity and homogeneity. The insights gained from this study guide design strategies for improvement of advanced chemically amplified photoresists for EUV lithography.
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