Dr. Sung-Jin Cho Profile

Dr. Sung-Jin Cho

at Oxford Instruments Plasma Technology Ltd.

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Proceedings Article | 12 March 2024 Poster + Paper

Straightforward method for sidewall roughness measurements by AFM on ion beam etched slanted diffraction gratings and their topography development

Paulo Lima, Sebastien Pochon, David Pearson, Sung-Jin Cho

Proceedings Volume 12913, 129131A (2024) https://doi.org/10.1117/12.3000170

KEYWORDS: Atomic force microscopy, Diffraction gratings, Ion beams, Etching, Plasma, Equipment, Silicon, Semiconducting wafers, Scanning electron microscopy

Read Abstract +

The roughness of sidewalls on slanted etched diffraction gratings needs to be minimized to avoid compromising their optical efficiency. Sidewall roughness usually does not significantly alter the overall features of gratings reflectance, however, narrow spectral features that are due to strong Fabry–Perot resonances can be strongly affected by roughness1,2. The complication in performing these roughness measurements is to access the slanted sidewall by Atomic Force Microscope (AFM) tips on a typical etched feature with Critical Dimension (CD) of 100 nm, 200 nm pitch and on a steep angle of 45 degrees. Usually, to address this challenge, expensive long AFM tips and non-standard AFMs capable of measuring samples on a certain angle are used2. Alternatively, a post process on the wafer is required3,4,5. We present a simple method to measure the gratings’ sidewall roughness without any physical and/or chemical process and optical analysis needed before or after the measurement and which is also done on a standard AFM. The method could, in principle, be applied to measure sidewall roughness on any etched trench sidewalls or deposited features. Diffraction gratings were processed by an Oxford Instruments Plasma Technology’s Large (30cm) Ion Beam Etch Source. Patterned SiO2 and Silicon slanted sidewalls roughnesses were measured by an in-house conventional Asylum Research - Jupiter XR - AFM allowing a speedy sidewall roughness assessment and development. Feasibility tests for SiO2 slanted diffraction gratings processed by the Oxford Instruments Plasma Technology Ion Beam Etch System showed a very low roughness of 1.3nm for the trench sidewall.

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