Mr. Sung-Hak Yi Profile

Sung-Hak Yi

at Kookmin Univ

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Author

Publications (5)

Proceedings Article | 4 January 2008 Paper

Fabrication of InGaN quantum dots by periodically interrupted growth in MOCVD

Seung-Kyu Choi, Jae-Min Jang, Sung-Hak Yi, Jung-A Kim, Woo-Gwang Jung

Proceedings Volume 6831, 683119 (2008) https://doi.org/10.1117/12.757420

KEYWORDS: Indium gallium nitride, Gallium nitride, Quantum dots, Metalorganic chemical vapor deposition, Atomic force microscopy, Sapphire, Luminescence, Indium, Nd:YAG lasers, Optical properties

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Proceedings Article | 4 January 2008 Paper

Properties of aluminum doped zinc oxide thin film by sol-gel process

Sung-Hak Yi, Seung-Kyu Choi, Jae-Min Jang, Jung-A Kim, Woo-Gwang Jung

Proceedings Volume 6831, 68311A (2008) https://doi.org/10.1117/12.757447

KEYWORDS: Zinc oxide, Aluminum, Doping, Sol-gels, Thin films, Annealing, Crystals, Zinc, Transmittance, Coating

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Proceedings Article | 20 February 2007 Paper

Patterned growth of ZnO nanorod by solution chemical method

Sung-Hak Yi, Seung-Kyu Choi, Jae-Min Jang, Seung-Hee Ko, Jung-A Kim, Woo-Gwang Jung

Proceedings Volume 6474, 64741L (2007) https://doi.org/10.1117/12.699295

KEYWORDS: Zinc oxide, Optical lithography, Photoresist materials, Crystals, Ultraviolet radiation, Transmission electron microscopy, Positron emission tomography, Sol-gels, Coating, Nanorods

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Proceedings Article | 20 February 2007 Paper

Fabrication of well-aligned ZnO nanorods by hydrothermal process using GaN epitaxial layer

Jae-Min Jang, Sung-Hak Yi, Seung-Kyu Choi, Jung-A Kim, Woo-Gwang Jung

Proceedings Volume 6474, 64741N (2007) https://doi.org/10.1117/12.699303

KEYWORDS: Zinc oxide, Gallium nitride, Crystals, Nanolithography, Nanostructures, Silicon, Luminescence, Sapphire, Ultraviolet radiation, Nanorods

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Proceedings Article | 2 February 2007 Paper

Fabrication and characterization of self-assembled InGaN quantum dots by periodic interrupted growth

Seung-Kyu Choi, Jae-Min Jang, Sung-Hak Yi, Jung-A Kim, Woo-Gwang Jung

Proceedings Volume 6479, 64791F (2007) https://doi.org/10.1117/12.699293

KEYWORDS: Quantum dots, Indium gallium nitride, Gallium nitride, Luminescence, Sapphire, Atomic force microscopy, Metalorganic chemical vapor deposition, Indium, Nd:YAG lasers, Optical properties

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