In this presentation, we discuss the integration of amorphous GaOx into back-gated transistors. The a-GaOx films (22 -100 nm) were grown by plasma-enhanced atomic layer deposition (PE-ALD). The conductivity of the films was tuned by changing the O2 plasma exposure time during the ALD cycles, which determines the content in oxygen vacancies. Back-gated transistors were fabricated with Al2O3 gate oxide on highly-doped Si substrate, with or without encapsulation of the top surface. The electrical properties of the devices will be discussed. Low sub-threshold swing (~150 mV/dec), on/off ratio >105 and operating drain voltage below 5V were obtained.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.