Mr. Siddharth Chauhan Profile

Siddharth Chauhan

at Univ of Texas at Austin

SPIE Involvement:

Author

Publications (5)

SPIE Journal Paper | 12 March 2014

Mesoscale modeling: a study of particle generation and line-edge roughness

Siddharth Chauhan, Mark Somervell, Michael Carcasi, Steven Scheer, Roger Bonnecaze, Chris Mack, C. Grant Willson

JM3, Vol. 13, Issue 01, 013012, (March 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.1.013012

KEYWORDS: Particles, Polymers, Line edge roughness, Monte Carlo methods, Diffusion, Photoresist developing, Photoresist materials, Lithography, 3D modeling, Molecules

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Proceedings Article | 31 March 2010 Paper

Extension of 248 nm Monte Carlo, mesoscale models to 193 nm platforms

Michael Carcasi, Mark Somervell, Steven Scheer, Siddharth Chauhan, Jeffrey Strahan, C. Willson

Proceedings Volume 7639, 76392K (2010) https://doi.org/10.1117/12.846658

KEYWORDS: Systems modeling, Line edge roughness, Polymers, Diffusion, Calibration, Data modeling, Monte Carlo methods, Lithography, Molecular interactions, Stochastic processes

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Proceedings Article | 26 March 2010 Paper

Particle generation during photoresist dissolution

Siddharth Chauhan, Mark Somervell, Michael Carcasi, Steven Scheer, Roger Bonnecaze, Chris Mack, C. Grant Willson

Proceedings Volume 7639, 763933 (2010) https://doi.org/10.1117/12.848424

KEYWORDS: Particles, Polymers, Monte Carlo methods, Photoresist materials, Photoresist developing, Lithography, Molecules, Diffusion, 3D modeling, Line edge roughness

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Proceedings Article | 1 April 2009 Paper

Polymer dissolution model: an energy adaptation of the critical ionization theory

Siddharth Chauhan, Mark Somervell, Steven Scheer, Chris Mack, Roger Bonnecaze, C. Grant Willson

Proceedings Volume 7273, 727336 (2009) https://doi.org/10.1117/12.814344

KEYWORDS: Polymers, Ionization, Monte Carlo methods, Line edge roughness, Polymer thin films, Interfaces, 3D modeling, Calibration, Molecular interactions, Motion models

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Proceedings Article | 22 March 2008 Paper

Extracting dose and focus from critical dimension data: optimizing the inverse solution

Kevin Lensing, J. Broc Stirton, Siddharth Chauhan

Proceedings Volume 6922, 692209 (2008) https://doi.org/10.1117/12.775441

KEYWORDS: Data modeling, Lithography, Numerical analysis, Semiconducting wafers, Metrology, Testing and analysis, Critical dimension metrology, Finite element methods, Process control, Reticles

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