The plane launch of electron beam can be realized easily under the light for negative electron affinity (NEA) GaN vacuum electron source. With excellent stability in ultra high vacuum environment, GaN vacuum electron source is the best choice in the fields of microelectronics and electron beam lithography etc.. Using the activation and evaluation system for NEA photocathode, the GaN vacuum electron source material sample was activated with Cs and O, and the photocurrent curve for GaN photocathode was gotten. Aiming at the theoretical and technical problems in practical applications, surrounding the material property parameters of GaN vacuum electron source and the electron transport characteristics from the bulk to the surface, the photoemission theory was researched for NEA GaN vacuum electron source. And the application of NEA GaN vacuum electronic source was prospected.
Using the activation and evaluation system for negative electron affinity (NEA) photocathode, the Cs activation was finished for GaN photocathode, and the Cs, O activations was completed by using the alternate method of Cs source continues, O source intermittent for the cathode sample, the photocurrent curve was gotten during the activation process. Based on the characteristics of NEA and the formation of cathode surface barrier, the evolution of GaN photocathode surface barrier before and after activation was analyzed. After the GaN photocathode being purified, the adsorption of cesium is a key step for getting the NEA surface. With Cs alone, the electron affinity potential change of 3.0eV can be obtained, and the vacuum energy level can be moved to approximately 1.0eV below the bottom of conduction band. Together with Cs, O processing can further reduce the vacuum energy level by 0.2eV.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.