Dr. Serhiy Danylyuk Profile

Dr. Serhiy Danylyuk

at Fraunhofer ILT

SPIE Involvement:

Author

Publications (30)

Proceedings Article | 12 March 2024 Presentation + Paper

Laser-lift-off of GaN-based transistors with an ultra-short-pulsed deep UV laser

Lutz Deriks, Eldad Bahat Treidel, Elisabeth Brandl, Julian Bravin, Enrico Brusaterra, Serhiy Danylyuk

Proceedings Volume 12872, 1287207 (2024) https://doi.org/10.1117/12.3001106

KEYWORDS: Gallium nitride, Semiconducting wafers, Sapphire, Laser bonding, Wafer bonding, Gallium, Deep ultraviolet, Transistors, Laser liftoff, Wide bandgap semiconductors

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Proceedings Article | 21 November 2023 Poster + Paper

Development of an ultra-compact inline transmission grating spectrograph for extreme ultraviolet wavelengths

Sascha Brose, Serhiy Danylyuk, Bernhard Lüttgenau, Ismael Gisch, Lars Lohmann, Jochen Stollenwerk, Carlo Holly

Proceedings Volume 12750, 127500Q (2023) https://doi.org/10.1117/12.2683682

KEYWORDS: Spectrographs, Extreme ultraviolet, Spectral resolution, Photodiodes, Optical filters, Optical design, Design and modelling, Tunable filters, Thin films, Thin film coatings

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Proceedings Article | 5 October 2023 Paper

Investigation of the resolution limit of Talbot lithography with compact EUV exposure tools

Bernhard Lüttgenau, Sascha Brose, Serhiy Danylyuk, Jochen Stollenwerk, Carlo Holly

Proceedings Volume 12802, 1280203 (2023) https://doi.org/10.1117/12.2675605

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Lithography, Photoresist materials, Nanostructures, Simulations, Phase shifts, Extreme ultraviolet, Signal intensity, Semiconducting wafers

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Proceedings Article | 17 March 2023 Presentation + Paper

Sub-micrometer structuring of surfaces with deep UV lasers

Serhiy Danylyuk, Martin Osbild, Leon Korr, Max Fischer, Ralph Delmdahl, Martin Reininghaus

Proceedings Volume 12409, 1240911 (2023) https://doi.org/10.1117/12.2647865

KEYWORDS: Photomasks, Deep ultraviolet, Laser ablation, Pulsed laser operation, Excimer lasers, Ultraviolet radiation, Laser applications

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Proceedings Article | 1 December 2022 Presentation + Paper

Toward the resolution limit of Talbot lithography with compact EUV exposure tools

Bernhard Lüttgenau, Sascha Brose, Serhiy Danylyuk, Jochen Stollenwerk, Carlo Holly

Proceedings Volume 12292, 1229208 (2022) https://doi.org/10.1117/12.2641693

KEYWORDS: Photomasks, Lithography, Extreme ultraviolet lithography, Phase shifts, Nanostructures, Extreme ultraviolet, Photoresist materials

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SPIE Journal Paper | 20 April 2022 Open Access

Latent image characterization by spectroscopic reflectometry in the extreme ultraviolet

Sophia Schröder, Lukas Bahrenberg, Bernhard Lüttgenau, Sven Glabisch, Sascha Brose, Serhiy Danylyuk, Jochen Stollenwerk, Peter Loosen, Carlo Holly

JM3, Vol. 21, Issue 02, 021208, (April 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.2.021208

KEYWORDS: Extreme ultraviolet, Reflectance spectroscopy, Reflectivity, Extreme ultraviolet lithography, Spectroscopy, Reflectometry, Photoresist materials, Imaging spectroscopy, Grazing incidence, Image processing

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Proceedings Article | 13 October 2021 Poster + Presentation + Paper

Design and realization of an in-lab EUV dual beamline for industrial and scientific applications

B. Lüttgenau, S. Brose, S. Danylyuk, J. Stollenwerk, P. Loosen, C. Holly

Proceedings Volume 11854, 1185419 (2021) https://doi.org/10.1117/12.2600935

KEYWORDS: Photomasks, Semiconducting wafers, Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Photoresist materials, Electron beam lithography, Nanostructures, Phase shifts

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Applications that require high resolution patterns are numerous, leading to an increasing demand for compact patterning tools and alternative lithographic concepts. For many scientific applications like biosensing or fabrication of metamaterials, or artificial crystals, the achievable resolution and the patterned area of the fabrication process are of main importance. In the field of high-volume manufacturing, there is a need for high-resolution patterning at the industrial exposure wavelength of 13.5 nm. The main industrial application for compact exposure tools is EUV photoresist development and its related process optimization. The overall patterned area is of minor interest. Instead, the focus is placed on the achievable resolution and quality of the intensity distribution used for the patterning tests. The realized EUV dual beamline allows to address both application fields in a single in-lab setup. By operating the source with an argon/xenon (Ar/Xe) gas mixture, a narrowband spectrum with a main wavelength of 10.9 nm is created without the need of spectral filtering. The resulting intensity of up to 2 mW/cm² in wafer plane allows large area patterning with highest throughput of several mm²/min. Single exposure fields of 2 x 2 mm² can be stitched together to achieve an overall patterned area of up to several cm² with minimal stitching borders of ~ 1 μm. By inserting a customized multilayer mirror into the beamline, the emission spectrum of the DPP source (operated with pure Xe gas) is in-band filtered to 13.5 nm, thus allowing qualification of industrial photoresists regarding sensitivity, contrast and resolution. The mask-wafer positioning system for the 13.5 nm beamline is designed for maximum rigidity to minimize relative movements between the mask and wafer that would lower the achievable resolution. Multi-field resolution test masks are created in-house and are exposed in a parallel manner to determine the achievable resist resolution in an efficient manner. Transmission mask designs are optimized by a rigorous simulation model. By tuning the pattern geometry on mask, different patterns like contact holes or nanopillars can be created on the wafer, tailored to the required application.

Proceedings Article | 22 February 2021 Presentation + Paper

Latent image characterization by spectroscopic reflectometry in the extreme ultraviolet

Sophia Schröder, Lukas Bahrenberg, Bernhard Lüttgenau, Sven Glabisch, Serhiy Danylyuk, Sascha Brose, Jochen Stollenwerk, Peter Loosen

Proceedings Volume 11611, 116111M (2021) https://doi.org/10.1117/12.2583830

KEYWORDS: Reflectance spectroscopy, Extreme ultraviolet, Photoresist materials, Reflectometry, Reflectivity, Spectroscopy, Imaging spectroscopy, Statistical modeling, Extreme ultraviolet lithography, Photoresist developing

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Proceedings Article | 22 February 2021 Poster + Paper

Broadband scatterometry at extreme ultraviolet wavelengths for nanograting characterization

Moein Ghafoori, Lukas Bahrenberg, Sven Glabisch, Sophia Schroeder, Serhiy Danylyuk, Sascha Brose, Jochen Stollenwerk, Larissa Juschkin, Peter Loosen

Proceedings Volume 11611, 116112F (2021) https://doi.org/10.1117/12.2584738

KEYWORDS: Scatterometry, Extreme ultraviolet, Diffraction, Metrology, Diffraction gratings, Nanostructures, Inspection, Grazing incidence, Statistical modeling, Spectroscopy

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Proceedings Article | 13 October 2020 Presentation + Paper

Accuracy analysis of a stand-alone EUV spectrometer for the characterization of ultrathin films and nanoscale gratings

Sophia Schröder, Lukas Bahrenberg, Nimet Kutay Eryilmaz, Sven Glabisch, Serhiy Danylyuk, Sascha Brose, Jochen Stollenwerk, Peter Loosen

Proceedings Volume 11517, 115170S (2020) https://doi.org/10.1117/12.2573148

KEYWORDS: Extreme ultraviolet, Spectroscopy, Reflectivity, Reflectance spectroscopy, Reflectometry, Optical components, Model-based design, Statistical modeling, Statistical analysis, Plasma

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Proceedings Article | 13 October 2020 Poster + Paper

Design and realization of an industrial stand-alone EUV resist qualification setup

B. Lüttgenau, S. Brose, S. Choi, D. Panitzek, S. Danylyuk, R. Lebert, J. Stollenwerk, P. Loosen

Proceedings Volume 11517, 115171F (2020) https://doi.org/10.1117/12.2572803

KEYWORDS: Photomasks, Extreme ultraviolet, Lithography, Lithographic illumination, Phase shifts, Semiconducting wafers, Image resolution, Diffraction, Extreme ultraviolet lithography, Optical lithography

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The EUV laboratory exposure tool (EUV-LET) is a compact nanostructuring setup used for large-area patterning of arbitrary to periodic structures as well as industrial photoresist characterization in terms of sensitivity, contrast and resolution. The setup utilizes partially coherent radiation of a compact discharge-produced plasma (DPP) EUV source, spectrally filtered by a multilayer mirror to a wavelength of 13.5 nm with 4 % bandwidth (full width at half maximum, FWHM). The system is equipped with a precise positioning system for mask and wafer, which allows resist exposures at defined distances. For the generation of large area nanopatterns, the achromatic Talbot lithography is applied which is well suited for high-resolution patterning of periodic structures with partially coherent radiation from plasma-based EUV sources. Optimized transmission masks enable the generation of contrast rich intensity modulations leading to structure sizes below 40 nm. The theoretical resolution limit is in the sub-10 nm range by taking advantage of a two times mask pattern demagnification. The achievable practical resolution is mainly limited by the fabrication of the required transmission masks and the optical properties of the mask illumination. In this contribution, the EUV-LET serves as a basis to identify design rules for core building blocks of a future industrial EUV resist qualification setup (EUV-REQS). These core building blocks try to overcome the main limitations to resist testing at highest resolution as stated above. For the optimization of the illumination properties, the design of highly efficient illumination optics is investigated and presented. Aims of the illumination optics are the generation of high throughput, homogeneous illumination of the patterned mask area and the optimization of the EUV radiation properties to fulfill the requirements for Talbot lithography. For the generation of high-resolution intensity patterns in wafer plane, the design of resolution test masks is analyzed and evaluated by means of the achievable resolution and patterning uniformity. The fabrication of a resolution test mask and selected exposure results are shown as well.

Proceedings Article | 20 September 2020 Presentation

Metrology and irradiation systems for accelerated testing of EUVL components

Jochen Vieker, Klaus Bergmann, Serhiy Danylyuk, Sascha Brose

Proceedings Volume 11517, 115170T (2020) https://doi.org/10.1117/12.2573152

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Metrology, Scanners, Lithography, Optical lithography, Reflectometry, Optical testing, Optical components, Atmospheric particles

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Proceedings Article | 23 March 2020 Paper

Novel high-contrast phase-shifting masks for EUV interference lithography

B. Lüttgenau, S. Brose, S. Danylyuk, J. Stollenwerk, P. Loosen

Proceedings Volume 11323, 113231Q (2020) https://doi.org/10.1117/12.2551856

KEYWORDS: Photomasks, Diffractive optical elements, Lithography, Diffraction, Phase shifts, Diffraction gratings, Extreme ultraviolet, Modulation transfer functions, Modulation

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When it comes to the patterning of periodic structures like lines and spaces or contact hole arrays interference lithography can be effectively applied. By the use of ultrashort wavelengths in extreme ultraviolet (EUV) range, structure sizes can be pushed into the sub-100 nm region. Using advanced interference schemes, such as achromatic Talbot imaging, high-quality large-area patterning can be realized, e.g. for resist stochastics tests as well as for advanced fabrication processes in research and also small-batch production. Since the Talbot lithography only requires medium spatial coherence and accepts broadband emission, the approach can be used not only with coherent radiation as provided by synchrotron facilities but also with compact plasma-based EUV sources. In this contribution the theoretical resolution limit for the achromatic Talbot lithography is determined by simulations for the use of optimized phase-shifting transmission mask concepts illuminated by compact discharge-produced plasma EUV source operating at a main wavelength of 13.5 nm. The further effects that reduce a practical resolution limit, such as mask imperfections, positioner instabilities and resist contrast are also considered. With the realized EUV laboratory exposure tool and polymer-based contact hole phase-shifting masks 28 nm resolution has been demonstrated so far. Main limitations are found in the mask fabrication process that cannot be further down-scaled due to increasing aspect ratios and pattern degradation of the mask structures. To extend the developed nanopatterning technology to the sub-30 nm region, optimized phase-shifting transmission masks have to be designed and fabricated, enabling a contrast-rich intensity modulation in wafer plane. As size of the mask openings is approaching the exposure wavelength, mask geometry has to be optimized for every node. In this paper rigorous simulations of new mask designs optimized for the achromatic Talbot lithography are presented. For selected phase-shifting transmission masks, the influence of the mask material and geometry on the resulting aerial image is evaluated along with an analysis of the theoretical resolution limit.

Proceedings Article | 20 March 2020 Paper

Nanoscale grating characterization through EUV spectroscopy aided by machine learning techniques

Lukas Bahrenberg, Sven Glabisch, Serhiy Danylyuk, Moein Ghafoori, Sophia Schröder, Sascha Brose, Jochen Stollenwerk, Peter Loosen

Proceedings Volume 11325, 113250X (2020) https://doi.org/10.1117/12.2550508

KEYWORDS: Extreme ultraviolet, Reflectivity, Diffraction gratings, Diffraction, Databases, Spectroscopy, Neural networks, Silica, Chromium, Machine learning

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SPIE Journal Paper | 30 January 2020

Quantitative characterization of absorber and phase defects on EUV reticles using coherent diffraction imaging

Iacopo Mochi, Sara Fernandez, Ricarda Nebling, Uldis Locans, Rajendran Rajeev, Atoosa Dejkameh, Dimitrios Kazazis, Li-Ting Tseng, Serhiy Danylyuk, Larissa Juschkin, Yasin Ekinci

JM3, Vol. 19, Issue 01, 014002, (January 2020) https://doi.org/10.1117/12.10.1117/1.JMM.19.1.014002

KEYWORDS: Extreme ultraviolet, Carbon, Reticles, Inspection, Defect detection, Coherence imaging, Photomasks, Phase measurement, Reflectivity, Microscopes

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Proceedings Article | 26 September 2019 Paper

Laboratory-based EUV spectroscopy for the characterization of thin films, membranes and nanostructured surfaces

Lukas Bahrenberg, Sven Glabisch, Moein Ghafoori, Sascha Brose, Serhiy Danylyuk, Jochen Stollenwerk, Peter Loosen

Proceedings Volume 11147, 111471X (2019) https://doi.org/10.1117/12.2536884

KEYWORDS: Extreme ultraviolet, Spectroscopy, Reflectivity, Thin films, Extreme ultraviolet lithography, Interfaces, Metrology, Transmittance, Pellicles, Reflectance spectroscopy

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Proceedings Article | 26 September 2019 Paper

Industrial photoresist development with the EUV laboratory exposure tool: mask fabrication, sensitivity and contrast

Sascha Brose, Serhiy Danylyuk, Franziska Grüneberger, Maik Gerngroß, Jochen Stollenwerk, Matthias Schirmer, Peter Loosen

Proceedings Volume 11147, 111471I (2019) https://doi.org/10.1117/12.2536794

KEYWORDS: Photoresist materials, Photoresist developing, Extreme ultraviolet lithography, Optical lithography, Photomasks, Lithography, Extreme ultraviolet, Optical filters, Nanostructures, Diffractive optical elements

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Proceedings Article | 9 September 2019 Presentation

Laboratory-scale EUV microscopy and nanometrology for scientific and industrial applications (Conference Presentation)

Serhiy Danylyuk

Proceedings Volume 11086, 110860T (2019) https://doi.org/10.1117/12.2527743

KEYWORDS: Extreme ultraviolet, Microscopy, Thin films, Nanotechnology, Metrology, Reflectance spectroscopy, Reflectometry, Visible radiation, Ultraviolet radiation, EUV optics

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Proceedings Article | 26 March 2019 Paper

Spectroscopic reflectometry in the extreme ultraviolet for critical dimension metrology

Lukas Bahrenberg, Serhiy Danylyuk, Robert Michels, Sven Glabisch, Moein Ghafoori, Sascha Brose, Jochen Stollenwerk, Peter Loosen

Proceedings Volume 10959, 109591X (2019) https://doi.org/10.1117/12.2513173

KEYWORDS: Reflectivity, Extreme ultraviolet, Reflectance spectroscopy, Metrology, Critical dimension metrology, Spectroscopy, Reflectometry, Grazing incidence, Scanning electron microscopy, Scatterometry

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Proceedings Article | 26 March 2019 Paper

EUV-LET 2.0: a compact exposure tool for industrial research at a wavelength of 13.5nm

Sascha Brose, Serhiy Danylyuk, Lukas Bahrenberg, Rainer Lebert, Jochen Stollenwerk, Peter Loosen, Larissa Juschkin

Proceedings Volume 10957, 109571K (2019) https://doi.org/10.1117/12.2513755

KEYWORDS: EUV optics, Photomasks, Semiconducting wafers, Extreme ultraviolet, Diffraction, Photoresist materials, Mirrors, Lithography, Optical filters, Polymers, Optical lithography

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In this paper the authors present the EUV laboratory exposure tool in a new configuration for in-band operation at a wavelength of 13.5 nm, named EUV-LET 2.0. Compared to the previous configuration for a working wavelength of 10.9 nm, which was aimed at cost-efficient general nanostructuring, the main applications of the EUV-LET 2.0 can be found in the industrial research, development and quality control of EUV photoresists. The tool is capable of photoresist characterization in terms of sensitivity, contrast, outgassing behavior and resolution. Additionally, the exposure tool can be utilized for in-band transmission measurements of photoresists and filters. The EUV-LET 2.0 uses the xenon plasma emission from a compact discharge-produced plasma (DPP) EUV source, filtered to in-band EUV at 13.5 nm with 4 % bandwidth (at full-width at half maximum) by an out-of-band filter (niobium/silicon nitride) and a multilayer mirror (molybdenum/silicon). High-resolution phase-shifting transmission masks define the features and are positioned precisely to the resist-coated wafer. An EUV sensitive charge-coupled device (CCD) camera supports beam alignment and diffraction efficiency measurements. For high-resolution patterning the (achromatic) Talbot lithography is used, which is perfectly suited for partially coherent radiation of a defined bandwidth, as provided by a plasma-based radiation source. The paper addresses the general tool configuration including spectral characterization of the DPP EUV source before and after multilayer reflection, diffraction efficiency measurements of a realized phase-shifting mask, contrast curve measurements and exemplary exposures performed with a single contact hole mask. Different exposure results are achieved by varying the mask to wafer distance and by controlled movement of the wafer stage during an exposure. In this way both, de-magnified contact hole arrays as well as lines and spaces arrays with 35 nm half-pitch are obtained.

Proceedings Article | 12 October 2018 Presentation

Actinic laboratory EUV tools for mask and pellicle metrology (Conference Presentation)

Serhiy Danylyuk, Lukas Bahrenberg, Sascha Brose, Rainer Lebert, Jochen Stollenwerk, Peter Loosen

Proceedings Volume 10809, 108090S (2018) https://doi.org/10.1117/12.2501796

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Pellicles, Metrology, Reflectivity, Spectroscopy, Scanners, Reflectance spectroscopy, Algorithm development, Chemical elements

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The growing industrial need for at-wavelength metrology of crucial elements in the EUV production chain, such as EUV masks and pellicles, can only be answered by cost-effective stand-alone tools. Especially the scaling to higher average operating powers of future EUV scanners is a task requiring multiple tools that can investigate not only critical degradation under increased EUV intensities, but also give information about underlying physical mechanisms of degradation and the imposed structural and chemical changes. At RWTH Aachen University, prototype tools are developed that address this challenge. The realized high-intensity EUV exposure tool, with a tightly focused sub-100 µm EUV spot, provides a unique opportunity to investigate the influence of EUV intensities on the level of the 250 W EUV scanner generation and beyond. With its pulse-to-pulse measurement system, the exposure dose in the tool is controlled with sub-mW/mm2 precision and it is independent from the temporal stability of the source. The influence of these exposures on the specimen can directly be characterized by the versatile laboratory EUV spectrometer. The tool can perform spectroscopic measurements of reflectance and transmittance under variable incidence angles and operates spectroscopically in the important wavelength range from 9 nm to 17 nm. In reflectance mode, the incidence angle of illumination is adjustable from 5° to 12° grazing with sub-0.1° resolution, which allows extraction of optical constants for reflectance measurements. It uses an EUV-radiation source based on a gas-discharge plasma, whose instabilities are accounted for by permanent reference monitoring during measurements. This in combination with the use of a calibrated reference sample allows to determine reflectivities with an accuracy <1 %. An additional transmission mode for sufficiently thin membranes allows for an independent determination of absorption coefficients of mono- and multi-layered membranes. The developed analysis algorithms allow not only to obtain best-fit layer parameters, but also to analyze the resulting precision and cross-correlations of parameters. In this contribution, exemplary use-cases of the tools will be presented. The application of the described methods to resist and pellicle investigations and to contamination studies will be introduced and discussed.

Proceedings Article | 3 October 2018 Presentation + Paper

Holographic masks for computational proximity lithography with EUV radiation

V. Deuter, M. Grochowicz, S. Brose, J. Biller, S. Danylyuk, T. Taubner, D. Grützmacher, L. Juschkin

Proceedings Volume 10809, 108091A (2018) https://doi.org/10.1117/12.2502879

KEYWORDS: Photomasks, Lithography, Semiconducting wafers, Holography, Extreme ultraviolet, Computational lithography, Phase shifts, Phase shifting, Optical design, Photoresist processing

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Proceedings Article | 3 October 2018 Paper

Actinic tools for EUV resist characterization in research and production

R. Lebert, T. Missalla, C. Phiesel, C. Piel, S. Brose, S. Danylyuk, P. Loosen, K. Bergmann, J. Vieker

Proceedings Volume 10809, 108091V (2018) https://doi.org/10.1117/12.2501800

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Photoresist materials, Metrology, Photomasks, Optical filters, Optical lithography, Nanostructures, Pellicles

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Proceedings Article | 16 October 2017 Paper

Optimized phase-shifting masks for high-resolution resist patterning by interference lithography

Sascha Brose, Serhiy Danylyuk, Lukas Bahrenberg, Rainer Lebert, Peter Loosen, Larissa Juschkin

Proceedings Volume 10450, 104502A (2017) https://doi.org/10.1117/12.2280582

KEYWORDS: Photomasks, Lithography, Modulation, Image quality, Photoresist materials, Semiconducting wafers, Electron beam lithography, Extreme ultraviolet, Plasma, Phase shifts

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Proceedings Article | 16 October 2017 Paper

Characterization of pellicle membranes by lab-based spectroscopic reflectance and transmittance measurements in the extreme ultraviolet

Lukas Bahrenberg, Serhiy Danylyuk, Sascha Brose, Ivan Pollentier, Marina Timmermans, Emily Gallagher, Jochen Stollenwerk, Peter Loosen

Proceedings Volume 10450, 104501L (2017) https://doi.org/10.1117/12.2280579

KEYWORDS: Reflectivity, Reflectance spectroscopy, Pellicles, Transmittance, Spectroscopy, Extreme ultraviolet, Silicon, Carbon nanotubes, Mirrors, Reflectometry

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SPIE Journal Paper | 17 October 2016

Achromatic Talbot lithography with partially coherent extreme ultraviolet radiation: process window analysis

Sascha Brose, Jenny Tempeler, Serhiy Danylyuk, Peter Loosen, Larissa Juschkin

JM3, Vol. 15, Issue 04, 043502, (October 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.4.043502

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Scanning electron microscopy, Ultraviolet radiation, Diffraction, Electron beam lithography, Spatial coherence

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Proceedings Article | 18 March 2016 Paper

Enabling laboratory EUV research with a compact exposure tool

Sascha Brose, Serhiy Danylyuk, Jenny Tempeler, Hyun-su Kim, Peter Loosen, Larissa Juschkin

Proceedings Volume 9776, 97760R (2016) https://doi.org/10.1117/12.2219164

KEYWORDS: Photomasks, Semiconducting wafers, Extreme ultraviolet lithography, Extreme ultraviolet, Electron beam lithography, Lithography, Spatial coherence, Modulation transfer functions, Photoresist materials, Electron beams

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Proceedings Article | 13 March 2015 Paper

Analysis of distinct scattering of extreme ultraviolet phase and amplitude multilayer defects with an actinic dark-field microscope

Lukas Bahrenberg, Stefan Herbert, Jenny Tempeler, Aleksey Maryasov, Oskar Hofmann, Serhiy Danylyuk, Rainer Lebert, Peter Loosen, Larissa Juschkin

Proceedings Volume 9422, 942229 (2015) https://doi.org/10.1117/12.2085929

KEYWORDS: Scattering, Extreme ultraviolet, Microscopes, Photomasks, Inspection, Multilayers, Silicon, Light scattering, Reflection, Mirrors

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Proceedings Article | 30 September 2013 Paper

Tabletop coherent diffraction imaging with a discharge plasma EUV source

Larissa Juschkin, Lars Loetgering, Denis Rudolf, Rui Xu, Sascha Brose, Serhiy Danylyuk, Jianwei Miao

Proceedings Volume 8849, 88490Y (2013) https://doi.org/10.1117/12.2023895

KEYWORDS: Extreme ultraviolet, Diffraction, Plasma, Oxygen, Coherence imaging, Sensors, Image resolution, Optical filters, Signal detection, Wavefronts

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SPIE Journal Paper | 8 July 2013

Scalability limits of Talbot lithography with plasma-based extreme ultraviolet sources

Serhiy Danylyuk, Peter Loosen, Klaus Bergmann, Hyun-su Kim, Larissa Juschkin

JM3, Vol. 12, Issue 03, 033002, (July 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.3.033002

KEYWORDS: Photomasks, Extreme ultraviolet, Lithography, Extreme ultraviolet lithography, Polarization, Diffraction, Finite-difference time-domain method, Semiconducting wafers, Printing, Plasma

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