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Sebastian Geisler
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Publications (4)
Proceedings Article | 27 May 2009 Paper
CDP: application of focus drilling
S. Geisler, J. Bauer, U. Haak, K. Schulz, G. Old, E. Matthus
Proceedings Volume 7470, 747015 (2009) https://doi.org/10.1117/12.835204
KEYWORDS: Semiconducting wafers, Optical lithography, Resolution enhancement technologies, Photomasks, Critical dimension metrology, Lithography, Tolerancing, Binary data, Metals, Oxides
Proceedings Article | 2 May 2008 Paper
Optical proximity correction for 0.13 um SiGe:C BiCMOS
S. Geisler, J. Bauer, U. Haak, U. Jagdhold, R. Pliquett, E. Matthus, R. Schrader, H. Wolf, U. Baetz, H. Beyer, M. Niehoff
Proceedings Volume 6792, 679210 (2008) https://doi.org/10.1117/12.798786
KEYWORDS: Optical proximity correction, Photomasks, Scanning electron microscopy, Metals, Transistors, Distortion, Critical dimension metrology, Etching, Lithography, Line edge roughness
Proceedings Article | 2 May 2008 Paper
Double exposure technology for KrF lithography
S. Geisler, J. Bauer, U. Haak, D. Stolarek, K. Schulz, H. Wolf, W. Meier, M. Trojahn, E. Matthus, H. Beyer, G. Old, St. Marschmeyer, B. Kuck
Proceedings Volume 6792, 679203 (2008) https://doi.org/10.1117/12.798512
KEYWORDS: Lithography, Neodymium, Photomasks, Semiconducting wafers, Critical dimension metrology, Double patterning technology, Optical alignment, Sensors, Resolution enhancement technologies, Binary data
Proceedings Article | 11 April 2008 Paper
100 nm half–pitch double exposure KrF lithography using binary masks
S. Geisler, J. Bauer, U. Haak, D. Stolarek, K. Schulz, H. Wolf, W. Meier, M. Trojahn, E. Matthus
Proceedings Volume 6924, 69241Z (2008) https://doi.org/10.1117/12.771333
KEYWORDS: Lithography, Photomasks, Line edge roughness, Binary data, Critical dimension metrology, Lithographic illumination, Superposition, Stereolithography, Ultraviolet radiation, Semiconducting wafers
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