Hydrocarbon detection in the gas phase can be a powerful tool to guide downstream operations for the oil and gas industry. This application requires highly sensitive, selective and robust spectroscopic techniques. In this work we present: i) a quartz-enhanced photoacoustic (QEPAS) sensor that can individually detect methane and ethane in the part per billion range and propane in the ppm range by employing a single interband cascade laser emitting at 3345 nm; ii) a QEPAS sensor detecting 12CH4 and 13CH4 isotopes at the part-per billion sensitivity level, by employing a quantum cascade laser emitting at 7730 nm.
Hydrocarbon detection in the gas phase can be a powerful tool to guide downstream operations for the oil & gas industry. This application requires highly sensitive, selective and robust spectroscopic techniques. In this work, a quartz-enhanced photoacoustic sensor system designed to detect methane and ethane concentration levels in the part-per billion concentration range by employing a single interband cascade laser emitting at 3345 nm is reported. Measurements at both low and high pressure were carried out and mixtures simulating typical downhole compositions were analyzed.
We have integrated several optoelectronic devices into deep-submicron silicon fabrication process. The main results for monolithic integration of silicon planar interdigitated P-I-N photodiodes with transimpedance amplifiers and waveguide grating couplers will be reviewed. The integration process was carried out in an unmodified 130nm CMOS process flow, on SOI substrates. Photodetectors that were fabricated on 200nm-thick SOI exhibited a 3dB electrical bandwidth of 10GHz for -5V bias while the photodetectors fabricated on 2000nm-thick SOI had 8GHz 3dB electrical bandwidth for -28V bias. The external quantum efficiency of the 2000nm-thick photodetectors at 835nm was 14%. The 200nm-thick photodetectors were integrated with waveguide grating couplers. For 835nm, the external quantum efficiency of the photodetector improved from 3% to 12% when a diffraction grating with 265nm period was integrated on top of the photodiode. The 3dB electrical bandwidth of these photodetectors was 4.1GHz (RC limited). The dark current for these devices was 10pA at -3V bias for an area of 2500mm2. The photodetectors fabricated on 2000nm-thick SOI substrates were wire-bonded to SiGe transimpedance amplifiers with 184W transimpedance gain. When the photodiode was used in avalanche operation mode the sensitivity of -7dBm (BER<10-9) was achieved at 10Gb/s. The multiplication gain for the avalanche photodetector was in this case M=4. This is the highest speed reported for an all-silicon optical receiver.
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