Ms. Sang-Hyang Lee Profile

Sang-Hyang Lee

at Dongjin Semichem Co Ltd

SPIE Involvement:

Author

Publications (7)

Proceedings Article | 3 April 2007 Paper

Modified polymer architecture for immersion lithography

Sang Soo Kim, Jeong Woo Kim, Jung Youl Lee, Seung Keun Oh, Sang Hyang Lee, Jung Woo Kim, Jae Woo Lee, Deog bae Kim, Jaehyun Kim, Keun Do Ban, Cheol Kyu Bok, Seoung-Chan Moon

Proceedings Volume 6519, 65191W (2007) https://doi.org/10.1117/12.711657

KEYWORDS: Polymers, Polymerization, Line width roughness, Immersion lithography, Palladium, Line edge roughness, Photoresist processing, Promethium, Polymer thin films, Semiconducting wafers

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Proceedings Article | 23 March 2007 Paper

Polymer structure modifications for immersion leaching control

Sang Hyang Lee, Jung Woo Kim, Jeong Woo Kim, Seung Keun Oh, Chan Sik Park, Jung Youl Lee, Sang Soo Kim, Jae Woo Lee, Deogbae Kim, Jaehyun Kim, Keun Do Ban, Cheol Kyu Bok, Seung Chan Moon

Proceedings Volume 6519, 651925 (2007) https://doi.org/10.1117/12.711889

KEYWORDS: Polymers, Semiconducting wafers, Fluorine, Immersion lithography, Semiconductors, Polymer thin films, Photoresist materials, Lithography, Manufacturing, Silicon

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Proceedings Article | 11 April 2006 Paper

Polymer structure modifications for immersion leaching and watermark control

Jae Woo Lee, Seung Keun Oh, Jung Woo Kim, Sang Hyang Lee, Young Ho Jeong, Sang Soo Kim, Myoung Hwan Park, Deogbae Kim, Jaehyun Kim, Geunsu Lee, Seung-Chan Moon

Proceedings Volume 6153, 615321 (2006) https://doi.org/10.1117/12.655477

KEYWORDS: Polymers, Molecules, Digital watermarking, Photoresist processing, Liquids, Polymer thin films, Water, Optical lithography, Molecular interactions, Glasses

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Immersion materials have to overcome immersion-issues for successful wet process introduction to semiconductor mass production. Component-leaching issue is one of the most influential wet process huddles, which is related to immersion-liquid and projection lens contamination as well as resist patterning performances. In this paper, we will introduce our experimental results of leaching blocking effects resulted from the modification of polymer and additive structures and from the application of top surface blocking layers. PAG-leaching level of resist film formed of low Tg resin shows the highest meanwhile that of high Tg resin is the smallest leaching value. The interaction forces between additives and resin platforms are the most important to prevent additives leaching to immersion liquid. We have tested 3 different types of resin structures to modify the interaction forces between resin platform and resist components especially PAG molecules and photo-generated acid molecules. We changed 2-hydroxyethyl methacrylate(2-HEMA) contents to be 5, 10, 15% in our base resin, COMA-acrylate hybrid system to modify the hydrophilicity of resist platforms. By mimicking immersion process to obtain wet-performance of their resists we have obtained relative value of component-leaching. Interaction-force between resist platform and PAG was seemed to be largest when resist component-leaching is least so that the pattern profiles become to be vertical. It was appeared that the 5% 2-HEMA containing resin and TPS-Nonaflate PAG system showed the best performance because of its low leaching resulted from their strong interaction forces. Another polymer parameter to determine the component-diffusivity is glass transition temperature, Tg. Low Tg means high mobility of resin by small thermal energy due to high free volume contents inside of the resist film which can act as diffusion pathways of resist components. 10% MA resin system shows the lowest Tg, around 140 degrees C and the most serious T-topping profiles. Defectivity issue becomes more important in immersion process, which is most related to the partial leaching by residual water and resulted in watermark defects. We evaluated the relative easiness of watermark formation on different resist films by correlations between static and dynamic contact angles. We made 2 different resist films composed of 2 different water-repellent functional group monomers. Static contact angles of developer as well as DI water were measured. It was found indirectly that amphiphilicity of resist film surface makes positive effect on watermarks formation, that is, more hydrophobic and more developer-philic resist film remains less residual water droplets.

Proceedings Article | 4 May 2005 Paper

Diffusion contributions to line end shortening in 193-nm photolithography

Eun-Kyung Son, Jung-Woo Kim, Sang-Hyang Lee, Chan-Sik Park, Jae-Woo Lee, Jaehyun Kim, Geun-Su Lee, Sung-Koo Lee, Keun-Do Ban, Jae-Chang Jung, Cheol Kyu Bok, Seung-Chan Moon

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.598615

KEYWORDS: Diffusion, Polymers, Photoresist materials, Optical lithography, Electrodes, Lithography, Semiconducting wafers, Resistance, Optical proximity correction, Quenching (fluorescence)

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Proceedings Article | 14 May 2004 Paper

Investigation of the effect of resist components and process condition on photochemical efficiency of ArF photoresist

Jung-Woo Kim, Eun-Kyung Son, Sang-Hyang Lee, Deogbae Kim, Jaehyun Kim, Geunsu Lee, Jae Chang Jung, Cheol Kyu Bok, Seung Chan Moon, Ki Soo Shin

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534675

KEYWORDS: Polymers, Photoresist processing, Lithography, Photoresist materials, Diffusion, Semiconducting wafers, Silicon, Photorefractive polymers, Scanning electron microscopy, Electronic components

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Proceedings Article | 12 June 2003 Paper

Effects of quencher ability on profile in chemically amplified resist system

Deogbae Kim, Hyun-Jin Kim, Sook-Hee Cho, Dong-Hwal Lee, Kwang-Hyi Im, Min-Ja Yoo, Sang-Hyang Lee, Jaehyun Kim, Jin-Soo Kim, Hyeong-Soo Kim

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485161

KEYWORDS: Diffusion, Lithography, Polymers, Silicon, Line edge roughness, Chemically amplified resists, Photoresist processing, Semiconducting wafers, Coating, Etching

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Proceedings Article | 24 July 2002 Paper

Improvement of line edge roughness by employing new PAG

Yang-Sook Kim, Yun-Hyi Kim, Sang-Hyang Lee, Yun-Gill Yim, Deog-Bae Kim, Jae-Hyun Kim

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474285

KEYWORDS: Line edge roughness, Chromophores, Diffusion, Lithography, Absorption, 193nm lithography, Scanning electron microscopy, Ultraviolet radiation, Deep ultraviolet, Polymers

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Showing 5 of 7 publications

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