Dr. Saar Shabtay Profile

Dr. Saar Shabtay

at Applied Materials

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Publications (5)

Proceedings Article | 5 April 2012 Paper

Small particle defect characterization on critical layers of 22nm Spacer Self-Aligned Double Patterning (SADP)

Gurminder Singh, Kfir Dotan, Saar Shabtay, Man-Ping Cai, Noam Shachar, Chris Ngai, Chris Bencher, Liyan Miao, Yongmei Chen

Proceedings Volume 8324, 83241X (2012) https://doi.org/10.1117/12.918266

KEYWORDS: Particles, Lithography, Etching, Inspection, Defect detection, Double patterning technology, Defect inspection, Bridges, Wafer inspection, Semiconducting wafers

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Proceedings Article | 20 April 2011 Paper

Enhanced defect of interest [DOI] monitoring by utilizing sensitive inspection and ADRTrue SEM review

Remo Kirsch, Ulrich Zeiske, Saar Shabtay, Mirko Beyer, Liran Yerushalmi, Oren Goshen

Proceedings Volume 7971, 79712M (2011) https://doi.org/10.1117/12.881479

KEYWORDS: Inspection, Scanning electron microscopy, Process control, Semiconducting wafers, Optical inspection, Defect detection, Image classification, Semiconductors, Optical filters, Image filtering

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As semiconductor process design rules continue to shrink, the ability of optical inspection tools to separate between true defects and nuisance becomes more and more difficult. Therefore, monitoring Defect of Interest (DOI) become a real challenge (Figure 1). This phenomenon occurs due to the lower signal received from real defects while noise levels remain almost the same, resulting in inspection high nuisance rate, which jeopardizes the ability to provide a meaningful, true defect Pareto. A non-representative defect Pareto creates a real challenge to a reliable process monitoring (Figure 4). Traditionally, inspection tool recipes were optimized to keep data load at a manageable level and provide defect maps with ~10% nuisance rate, but as defects of interest get smaller with design rule shrinkage, this requirement results in a painful compromise in detection sensitivity. The inspection is usually followed by defect review and classification using scanning electron microscope (SEM), the classification done manually and it is performed on a small sample of the inspection defect map due to time and manual resources limitations. Sample is usually 50~60 randomly selected locations, review is performed manually most of the times, and manual classification is performed for all the reviewed locations. In the approach described in this paper, the inspection tool recipe is optimized for sensitivity rather than low nuisance rate (i.e. detect all DOI with compromising on a higher nuisance rate). Inspection results with high nuisance rate introduce new challenges for SEM review methodology & tools. This paper describe a new approach which enhances process monitoring quality and the results of collaborative work of the Process Diagnostic & Control Business Unit of Applied Materials® and GLOBALFOUNDRIES® utilizing Applied Materials ADRTrueTM & SEMVisionTM capabilities. The study shows that the new approach reveals new defect types in the Pareto, and improves the ability to monitor the process and identify excursion for low magnitude defect of interest.

Proceedings Article | 23 March 2009 Paper

Process variation monitoring (PVM) by wafer inspection tool as a complementary method to CD-SEM for mapping LER and defect density on production wafers

Saar Shabtay, Yuval Blumberg, Shimon Levi, Gadi Greenberg, Daniel Harel, Amiad Conley, Doron Meshulach, Kobi Kan, Ido Dolev, Surender Kumar, Kalia Mendel, Kaori Goto, Naoaki Yamaguchi, Yasuhiro Iriuchijima, Shinichi Nakamura, Shirou Nagaoka, Toshiyuki Sekito

Proceedings Volume 7272, 72720O (2009) https://doi.org/10.1117/12.814063

KEYWORDS: Semiconducting wafers, Line edge roughness, Wafer inspection, Finite element methods, Polarization, Inspection, Critical dimension metrology, Deep ultraviolet, Metrology, Process control

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Proceedings Article | 16 April 2008 Paper

AWV: high-throughput cross-array cross-wafer variation mapping

Jeong-Ho Yeo, Byoung-Ho Lee, Tae-Yong Lee, Gadi Greenberg, Doron Meshulach, Erez Ravid, Shimon Levi, Kobi Kan, Saar Shabtay, Yehuda Cohen, Ofer Rotlevi

Proceedings Volume 6922, 69221S (2008) https://doi.org/10.1117/12.772402

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Finite element methods, Polarization, Inspection, Deep ultraviolet, Reflectivity, Wafer inspection, Etching, Computer simulations

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Proceedings Article | 25 March 2008 Paper

Novel approach for immersion lithography defectivity control to increase productivity

Ilan Englard, Raf Stegen, Peter Vanoppen, Ingrid Minnaert-Janssen, Ted der Kinderen, Erik van Brederode, Frank Duray, Jeroen Linders, Denis Ovchinnikov, Rich Piech, Claudio Masia, Noam Hillel, Erez Ravid, Ofer Rotlevi, Amir Wilde, Saar Shabtay, Zach Telor, Robert Schreutelkamp

Proceedings Volume 6922, 69223U (2008) https://doi.org/10.1117/12.776085

KEYWORDS: Inspection, Scanning electron microscopy, Semiconducting wafers, Photodynamic therapy, Polarization, Particles, Immersion lithography, Scanners, Deep ultraviolet, Image classification

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