Mr. Ryan J. Westerhout Profile

Ryan J. Westerhout

at Univ of Western Australia

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 14 May 2007 Paper

1/f noise in HgCdTe infrared gated photodiodes

R. Westerhout, C. Musca, J. Antoszewski, J. Dell, L. Faraone

Proceedings Volume 6542, 65420E (2007) https://doi.org/10.1117/12.720516

KEYWORDS: Photodiodes, Mercury cadmium telluride, Mid-IR, Diodes, Diffusion, Infrared radiation, Amplifiers, Zinc, Resistance, Infrared photography

Read Abstract +

In this work gated midwave infrared (MWIR) Hg_1-xCd_xTe photodiodes are used to investigate the physical origin of 1/f noise generation. Gated photodiodes were fabricated on liquid phase epitaxy p-type HgCdTe MWIR material with a vacancy doped concentration of 1.6 x 10¹⁶cm^-3 and x = 0.31. CdTe was thermally deposited and used as both a passivant for the HgCdTe and a mask for the plasma-based type conversion, and ZnS was used as an insulator. Fabricated devices show a R₀A of 1-5x10⁴&OHgr;cm² at 77K with zero gate bias. Application of 2V to the gate improves the R₀A by more than two orders of magnitude to 6.0 x 10⁶&OHgr;cm², which corresponds to the p-type surface being at transition between depletion and weak inversion. Trap-assisted tunelling (TAT) current was observed at negative gate biases and reverse junction biases. For gate biases greater than 3V a field-induced junction breakdown was observed. Gated photodiodes show diffusion limited behaviour at zero bias above 200K, and TAT, band-to-band tunnelling, and generation-recombination (GR) limited behaviour below, for gate biases from -8V to 8V. Field-induced junction breakdown current was also observed to be temperature independent. Noise current, I_n = &agr;I&bgr;f^-0.5 trend was observed above 200pA reverse bias dark current, with &agr; = 3.5 x 10^-5 and &bgr; = 0.82, which corresponds to the TAT dominated region. Below 200pA, junction GR current starts to dominate and this previously mentioned trend for I_n is no longer observed. Junction GR current was not seen to be correlated with 1/f noise in these photodiodes.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years