As feature sizes decrease and the overall design shrinks, it is becoming increasingly difficult to reliably pattern gate line
ends, or poly end caps, so that they are able to extend over to the field area without bridging into an adjacent feature.
Furthermore, the trimming of the lines during the gate etch process is necessary due to the desire to decrease the poly
length. However, the line end is also trimmed while trimming the gate sidewall, often at higher rates than the sidewall
itself. This investigation focuses on decreasing the poly line end pullback, defined as the tip of the gate past active,
using lithography techniques and advanced etch approaches for the 65 nm and 45 nm nodes.
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