Many of the features of EPON and WiMAX are complementary. In [1] we proposed four basic architectures for the
integration of EPON and WiMAX, which employs an EPON as a backhaul to interconnect multiple WiMAX base
stations. The integration takes advantage of the high capacity of fibre communication as well as the mobile and non-line
of sight (NLOS) features of wireless communication. In this article, we recap these basic architectures and relevant
operational issues. We further propose more integrated architectures that are extended from the four basic architectures.
In addition, more design and operational issues relevant to the architectures are discussed. We expect that integration of
EPON and WiMAX can help realize fixed mobile convergence, and significantly reduce overall design and operational
costs for the new-generation broadband access networks.
In this paper, we focus on data channel scheduling algorithms for offset-time based QoS scheme in OBS networks and their performance evaluation. We propose two new data channel scheduling algorithms, namely, the Earliest Available Unscheduled Channel (EAUC) algorithm and the Least Gap with Void Filling (LGVF) algorithm. Simulation results show that the proposed burst scheduling algorithms can not only provide the better fairness for scheduling data channels and fair QoS supporting of different class service, but also achieve high link utilization while keeping the burst dropping probability low.
The important characteristics of actively mode-locked semiconductor lasers are identified and recent advances in numerical techniques for the optimization of these characteristics are discussed. Numerical results from a comprehensive numerical model, the Transmission-Line Laser Model, illustrate the applicability of numerical models to the design and understanding of mode-locked lasers.
Vertical-cavity surface-emitting lasers1 are generating much interest due to their geometric suitability for two-dimensional array fabrication and their potential for achieving ultra-low thresholds. Here we report on optically- and electrically-pumped microlaser devices. having transverse dimensions of a few microns and active material lengths of a few hundred A. The very small volumes are a key factor in achieving low thresholds. So far however surface recombination has prevented us from achieving thresholds much below 1 mA.
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