KEYWORDS: Semiconductors, Near field, Silicon carbide, Semiconductor materials, Near field optics, Spectroscopes, Infrared imaging, Infrared radiation, Phonons, Near field scanning optical microscopy
We show how extended defects in wide bandgap semiconductors manifest in the nanoscale infrared phonon response probed by scattering-type scanning near-field optical microscopy (s-SNOM). We correlate the s-SNOM response of various defects in 4H-SiC with UV-photoluminescence, secondary electron and electron channeling contrast imaging, and transmission electron microscopy. We identify evidence of step-bunching, recombination-induced stacking faults, and threading screw dislocations, and also demonstrate the interaction of surface phonon polaritons with extended defects. Our s-SNOM results help to advance material growth efforts for electronic, photonic, phononic, and quantum optical applications.
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