In this study, we focus on examining the stability of Al-based inorganic-organic hybrid thin films deposited through the molecular atomic layer deposition (MALD) process in ambient environment. Our observations reveal an initial reduction in material thickness within the first 3 days, followed by a period of stability. XPS analysis is employed to further investigate the chemical alternations in the aged Al-based hybrid thin films, revealing an increase in C=O species as well as overall oxygen content in the material. We also evaluate the effects of atmospheric exposure on the sensitivity of the Al-based hybrid thin films using electron flood exposure. This study aims to enhance the understanding of the stability of a vapor-phase synthesized hybrid thin film system for advanced resist applications.
Herein, we investigated the chemical reactions associated with low-energy electron exposures on an inorganic-organic hybrid thin film system deposited using molecular atomic layer deposition (MALD) for EUV photoresist applications. Using the hybrid thin films consisting of trimethylaluminum (TMA) and hydroquinone (HQ), we determined the critical doses and thickness contrast of the hybrid materials at various electron energies (up to 400 eV). The custom-built in-situ Fourier-Transform Infrared (FTIR) spectroscopy system, equipped with an electron flood gun and gas residual analyzer (RGA), was employed to monitor the chemical changes induced by low-energy electrons in the hybrid thin films. Based on the in-situ FTIR and RGA results, potential chemical reaction mechanisms responsible for the change in solubility of the TMA/HQ material are proposed.
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