We have developed a CMOS-compatible Silicon-on-Insulator photonic platform featuring active components such as pi- n and photoconductive (MIM) Ge-on-Si detectors, p-i-n ring and Mach-Zehnder modulators, and traveling-wave modulators based on a p-n junction driven by an RF transmission line. We have characterized the yield and uniformity of the performance through automated cross-wafer testing, demonstrating that our process is reliable and scalable. The entire platform is capable of more than 40 GB/s data rate. Fabricated at the IME/A-STAR foundry in Singapore, it is available to the worldwide community through OpSIS, a successful multi-project wafer service based at the University of Delaware. After exposing the design, fabrication and performance of the most advanced platform components, we present our newest results obtained after the first public run. These include low loss passives (Y-junctions: 0.28 dB; waveguide crossings: 0.18 dB and cross-talk -41±2 dB; non-uniform grating couplers: 3.2±0.2 dB). All these components were tested across full 8” wafers and exhibited remarkable uniformity. The active devices were improved from the previous design kit to exhibit 3dB bandwidths ranging from 30 GHz (modulators) to 58 GHz (detectors). We also present new packaging services available to OpSIS users: vertical fiber coupling and edge coupling.
Shared shuttle runs are an important factor of the microelectronics business ecosystem, allowing fabless semiconductor
companies to access advanced processes and supporting the development of new tools and processes. We report on the
creation and progress of a shared shuttle program for access to advanced silicon photonics optoelectronic platforms that
we expect will create a similar environment for the field of integrated photonics.
Silicon nano-slot waveguides have proven to be useful for a variety of applications, including nonlinear optics,
biosensing, and electrooptic modulation. In particular, an electrooptic polymer clad, electrically contacted, strip-loaded
slot waveguide design has been shown to be particularly useful for high-bandwidth electrooptic modulators. One of the
significant challenges for many of the applications of these waveguides is the necessity of low waveguide losses. We
demonstrate the ability to fabricate single mode strip-loaded slot waveguides, with losses as low as 6.5 dB/cm, using
conventional stepper-based photolithography. Additionally, we discuss the benefits of an asymmetric slot waveguide
design and present improved losses as low as 2 dB/cm for both asymmetric strip-loaded slot waveguides and regular
asymmetric slot waveguides fabricated in a different photolithographic process.
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