Effective harvesting light is a key factor for photoelectrical device to enhance quantum efficiency and responsitivity. Periodic nano structure has been proved and fabricated to harvest more light based on complex lithography and low efficiency e-beam lithography.Thereby, a cost-effective method of using PS sphere as hard mask was suggested to prepare sub-micro nano pillar on silicon surface as anti-reflective films.Field distribution of nano silicon pillar were simulated in FDTD software and simulation results showed that anti-reflective could be modified by changing the silicon diameter and period. The simulation results show that the center wavelength of the high-reflection film moves with the change of the nano pillar period, and the reflection intensity changes with the diameter and length of the nano pillar. Silicon nano pillar with 180nm diameter and 520nm period was determined theoretically and experimentally to be as anti-reflective films covering wavelength from 601nm to 640nm with average reflectance of less than 5%.
Graphene oxide (Go) is one of the important derivatives of graphene materials. It has excellent photoelectric properties due to oxygen functional groups introduced during the graphite peeling process. The electrical and optical properties of Go are closely sensitive to its chemical structure and can be adjusted chemically. Based on in-situ infrared dynamic test method, the structure and composition of graphene oxide are determined, and the real-time change of oxygen functional groups with temperature is characterized. The change trend of oxygen groups such as C-OH,O-H (water), O-H (in COOH),C=O with temperature was basically similar, but showed clearly different temperature dependent The loss of different oxygen groups is mainly concentrated in the following four temperature ranges: 22°C ~ 150°, 150 ° ~ 230°, 230° ~ 400°, and 400° ~ 530°, respectively.
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