In this work, we study transient THz conductivity of tungsten diselenide (WSe2) thin films to assess its potential for high-speed THz modulators, i.e., with pulsed optical excitation one could potentially realize all-optical, terahertz devices. Time-resolved THz spectroscopy, across different samples, reveal carrier recombination lifetimes of ~10-100 ps and a transient conductivity that exhibits a non-Drude behavior. We observe a strong dependence of the photoconductivity on the grain size. Based on this study, we can provide a general framework to understand the interplay between grain size and transient conductivity and leverage its role for ultrafast modulator design in terahertz metamaterials.
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