Hubert Martens, Wim Koppers, Ronald van den Oetelaar, Pierre Woerlee, Paul Weijenbergh, Yoshihiro Noda, Masafumi Aga, Shigeyuki Furomoto, Hideharu Takeshima
A single-sided double-layer recordable DVD disc with a storage capacity of 8.5 Gbyte has been developed. Backwards compatibility with the existing DVD read-only format has been achieved through the use of organic dye recording layers that have intrinsically low absorption at laser's wavelength used for recording and reading. We describe the disc technology that we have developed, present recording results for both layers, and discuss double-layer effects. We demonstrate for the first time the feasibility of a compatible double-layer recordable DVD disc.
KEYWORDS: Digital video discs, Modulation, Video, Sensors, Signal detection, Standards development, Mirrors, Optical storage, Optical proximity correction, Data storage
We propose a simple, inexpensive technique with high resolution to identify the weak spots in integrated circuits by means of a non-destructive photochemical process in which photoresist is used as the photon detection tool. The experiment was done to localize the breakdown link of thin silicon dioxide capacitors of 5 X 5 and 10 X 10 micrometer2 in sizes. Both positive and quasi-negative photoresists were employed. The resultant products are holes in the developed positive photoresist layer and mushroom- shaped spots in the quasi-negative one. Based on the photoresist decomposition energy dose, we could approximately calculate the light emitting power in the near UV range. Due to the proximity between the layer and the light source, the power is interpreted on a more accurate basis, which was a difficult task in previous research. The product sizes, dependent on the light emitting currents and exposure time, establish the core for a rough model that can be used for further application of this technique as a reliability analysis tool. One potential application is to detect and characterize regions of hot carriers on a VLSI circuit under operation for design improvement purpose.
Results are presented of the spectrally resolved absolute measurements of the electroluminescence of reverse-biased silicon nanometer-scale diode-antifuses brought into breakdown. The emission spectrum of the diode-antifuses is measured in the energy range of 1.4 - 2.8 eV at different reverse currents. The dependence of the emission intensity on the current was evaluated to study the dominant emission processes. Also the stability of the diode-antifuses has been tested. Results indicate that the diode-antifuse is basically a high quality device. Furthermore due to the nanometer-scale dimensions of the diode-antifuse, very high electrical fields and current densities are possible at low power consumption. This makes the diode-antifuse an excellent candidate to be utilized as a light source in Si- based sensors and actuator applications.
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