Mr. Peter D. Rhyins Profile

Peter D. Rhyins

Sr Development Engineer/CEO/CTO

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Author

Publications (10)

Proceedings Article | 10 July 2003 Paper

Dense only phase-shift template lithography

Michael Fritze, Brian Tyrrell, Renee Mallen, Bruce Wheeler, Peter Rhyins, Patrick Martin

Proceedings Volume 5042, (2003) https://doi.org/10.1117/12.485244

KEYWORDS: Photomasks, Lithography, Resolution enhancement technologies, Semiconducting wafers, Phase shifts, Optical proximity correction, Spatial frequencies, Computer aided design, Wafer-level optics, Neodymium

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Proceedings Article | 16 June 2003 Paper

Fabrication of Step and Flash imprint lithography templates using commercial mask processes

Ecron Thompson, Peter Rhyins, Ronald Voisin, S. Sreenivasan, Patrick Martin

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.490141

KEYWORDS: Etching, Photomasks, Lithography, Quartz, Optical lithography, Dry etching, Photoresist processing, Semiconducting wafers, Scanning electron microscopy, Image processing

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Proceedings Article | 15 January 2003 Paper

Design rules for the fabrication of binary half-tone masks used for MEMS and photonic devices

Peter Rhyins, Christopher Progler, Glenn Claydon, Ernest Balch

Proceedings Volume 4979, (2003) https://doi.org/10.1117/12.478283

KEYWORDS: Photomasks, Semiconducting wafers, Computer aided design, Critical dimension metrology, Binary data, Photoresist processing, Calibration, Microelectromechanical systems, Photonic devices, Deep ultraviolet

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SPIE Journal Paper | 1 October 2002

Investigation of the physical and practical limits of dense-only phase shift lithography for circuit feature definition

Brian Tyrrell, Michael Fritze, David Astolfi, Renee Mallen, Bruce Wheeler, Peter Rhyins, Patrick Martin

JM3, Vol. 1, Issue 03, (October 2002) https://doi.org/10.1117/12.10.1117/1.1503349

KEYWORDS: Photomasks, Lithography, Phase shifts, Image processing, Optical proximity correction, Semiconducting wafers, Optical lithography, Inspection, Binary data, System on a chip

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Proceedings Article | 30 July 2002 Paper

Minimization of image placement errors in chromeless phase-shift mask lithography

Michael Fritze, Brian Tyrrell, Susan Cann, Chris Carney, Betty Blachowicz, David Brzozowy, Thomas Kocab, Scott Bowdoin, Peter Rhyins, Christopher Progler, Patrick Martin

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474592

KEYWORDS: Image processing, Photomasks, Phase shifts, Lithography, Etching, Quartz, Coherence (optics), Mask making, Photoresist processing, Metrology

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Proceedings Article | 12 July 2002 Paper

Investigation of the physical and practical limits of dense-only phase-shift lithography for circuit feature definition

Brian Tyrrell, Michael Fritze, Renee Mallen, Bruce Wheeler, Peter Rhyins, Patrick Martin

Proceedings Volume 4692, (2002) https://doi.org/10.1117/12.475686

KEYWORDS: Photomasks, Lithography, Phase shifts, Semiconducting wafers, Optical proximity correction, Optical lithography, Image processing, Inspection, Binary data, Photoresist processing

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Proceedings Article | 11 March 2002 Paper

150-nm dense/isolated contact hole study with Canon IDEAL technique

Takeaki Ebihara, Peter Rhyins, Toshihiro Oga, Patrick Martin, Monika Sweis

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458270

KEYWORDS: Reticles, Binary data, Photomasks, Optical alignment, Scanning electron microscopy, Semiconducting wafers, Etching, Optical proximity correction, Image quality, Lithography

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This paper presents the results of a joint development effort between Canon USA, Inc. and Photronics, Inc. on 150nm contact hole application. A double exposure technique, Canon's IDEAL technique, is used to achieve the very small dense contact hole and isolated contact hole simultaneously. Canon's IDEAL exposure technique has shown, through numerous documented investigations to be beneficial for extending the current lithography tool life with regards to line patterns. However, it is also now equally important to evaluate IDEAL's advantages for contact holes. We look to apply the IDEAL technique to contact holes by using a Hole-shaped alternating Phase Shift Mask for the grid and a binary mask for trimming. This experiment was performed on a Canon FPA- 3000EX6 5X stepper with maximum NA0.65, using JSR TMX1260Y 300nm thick resist. All masks were made by Photronics. Since image intensity imbalances of Hole shaped alt-PSMs were too large to generate a perfect grid, we exposed twice with the same Hole-shaped alt-PSM reticle. The second exposure was shifted to combine 0 degree and 180-degree space, thereby creating a well-balanced grid. Subsequently, we used a binary mask for trimming. Through this method, 0.15 micrometers dense holes and 0.15 micrometers isolated holes with simple reticle bias were resolved simultaneously, and over 0.6 micrometers common DOF was obtained. Due to the high accuracy alignment between the PSM hole mask and binary mask from this experiment, double and triple exposure schemes can be used in actual production. Based on these experimental result, we also confirmed that the IDEAL technique allows fora 50nm combination error of stage stepping and reticle alignment without including significant CD error. A well- balanced grid can be generated using the vertical line PSM and horizontal line PSM, by minimizing image intensity imbalances due to PSM structures, however, the three-reticle application may prove prohibitive due to the increase in reticle cost.

Proceedings Article | 11 March 2002 Paper

Characterization of quartz-etched PSM masks for KrF lithography at the 100-nm node

Peter Rhyins, Michael Fritze, David Chan, Chris Carney, B. Blachowicz, Marco Vieira, Chris Mack

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458325

KEYWORDS: Photomasks, Quartz, Etching, Lithography, Semiconducting wafers, Metrology, Critical dimension metrology, Tolerancing, Reticles, Profilometers

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Proceedings Article | 14 September 2001 Paper

100-nm node lithography with KrF?

Michael Fritze, Brian Tyrrell, David Astolfi, Donna Yost, Paul Davis, Bruce Wheeler, Renee Mallen, J. Jarmolowicz, Susan Cann, Hua-Yu Liu, M. Ma, David Chan, Peter Rhyins, Chris Carney, John Ferri, B. Blachowicz

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435719

KEYWORDS: Photomasks, Lithography, Optical proximity correction, Photoresist processing, Optical lithography, Optics manufacturing, Image processing, Scanning electron microscopy, Double patterning technology, Etching

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Proceedings Article | 22 August 2001 Paper

Investigation of full-field CD control of sub-100-nm gate features by phase-shift 248-nm lithography

Michael Fritze, Brian Tyrrell, David Astolfi, Paul Davis, Bruce Wheeler, Renee Mallen, J. Jarmolowicz, Susan Cann, David Chan, Peter Rhyins, Martin Mastovich, Neal Sullivan, Robert Brandom, Chris Carney, John Ferri, B. Blachowicz

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436759

KEYWORDS: Lithography, Semiconducting wafers, Optical lithography, Photomasks, Critical dimension metrology, Reticles, Cadmium, Resolution enhancement technologies, Metrology, Phase shifts

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Showing 5 of 10 publications

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