Prof. Peter Mascher Profile

Prof. Peter Mascher

Professor and William Sinclair Chair at McMaster University

SPIE Involvement:

Author

Publications (18)

Proceedings Article | 13 March 2024 Presentation

Presentation

Prospects and design considerations for hybrid glass-silicon waveguides

Jonathan Bradley, Bruno Segat Frare, Batoul Hashemi, Pooya Torab Ahmadi, Manuel Arturo Méndez-Rosales, Niloofar Majidian Taleghani, Cameron Naraine, Khadijeh Miarabbas Kiani, Henry Frankis, Dawson Bonneville, Jens Schmid, Pavel Cheben, Ponnambalam Ravi Selvaganapathy, Peter Mascher, Andrew Knights

Proceedings Volume PC12891, PC1289107 (2024) https://doi.org/10.1117/12.3011295

KEYWORDS: Waveguides, Design and modelling, Silicon photonics, Laser resonators, Silicon, Metrology, Glasses, Cladding

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Proceedings Article | 17 March 2023 Presentation + Paper

Presentation + Paper

Prototyping of silicon nitride photonic integrated circuits for visible and near-infrared applications

Cameron Horvath, Jocelyn Westwood-Bachman, Kevin Setzer, Alexandria McKinlay, Cameron Naraine, Hamidu Mbonde, Bruno Segat Frare, Pooya Torab Ahmadi, Peter Mascher, Jonathan D. Bradley, Mirwais Aktary

Proceedings Volume 12424, 1242404 (2023) https://doi.org/10.1117/12.2647576

KEYWORDS: Silicon nitride, Photonic integrated circuits, Fabrication, Prototyping, Electron beam lithography, Silicon, Waveguides

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Proceedings Article | 17 March 2023 Presentation + Paper

Presentation + Paper

Erbium-doped tellurium oxide distributed Bragg reflector lasers on silicon nitride chips

Bruno Segat Frare, Dawson Bonneville, Hamidu Mbonde, Pooya Torab Ahmadi, Batoul Hashemi, Henry Frankis, Peter Mascher, Jonathan D. Bradley

Proceedings Volume 12424, 124240E (2023) https://doi.org/10.1117/12.2650693

KEYWORDS: Silicon nitride, Waveguides, Erbium lasers, Distributed Bragg reflectors, Tellurium, Photonic integrated circuits, Oxides, Laser damage threshold, Glasses, Semiconductor lasers

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Proceedings Article | 13 March 2023 Presentation + Paper

Presentation + Paper

Monolithic silicon avalanche photodetector utilizing surface state defects operating at 1550 nm

Yuxuan Gao, Feng Guo, Peter Mascher, Andrew Knights

Proceedings Volume 12426, 1242609 (2023) https://doi.org/10.1117/12.2651724

KEYWORDS: Silicon, Waveguides, Photodetectors, Light absorption, Avalanche photodetectors, Photocurrent, Optical surfaces, Fabrication, Polarized light, Ion implantation

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Proceedings Article | 1 May 2014 Paper

Paper

On the photoluminescence of as-deposited Tb-doped silicon oxides and oxynitrides fabricated by ECR-PECVD

J. Ramírez, J. Wojcik, Y. Berencén, P. Mascher, B. Garrido

Proceedings Volume 9133, 913309 (2014) https://doi.org/10.1117/12.2052571

KEYWORDS: Silicon, Oxygen, Nitrogen, Oxides, Ions, Luminescence, Doping, Silicon films, Terbium, Plasma

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SPIE Journal Paper | 9 April 2013 Open Access

Open Access

Highly efficient blue organic light-emitting diodes using dual emissive layers with host-dopant system

Bo Mi Lee, Hyeong Hwa Yu, You Hyun Kim, Nam Ho Kim, Ju An Yoon, Woo Young Kim, Peter Mascher

JPE, Vol. 3, Issue 01, 033598, (April 2013) https://doi.org/10.1117/12.10.1117/1.JPE.3.033598

KEYWORDS: Organic light emitting diodes, Luminous efficiency, Electrons, Energy transfer, Quantum wells, Excitons, Electroluminescence, Energy efficiency, Quantum efficiency, Electron transport

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Proceedings Article | 24 October 2012 Paper

Paper

Digital implementation of a neural network for imaging

Richard Wood, Alex McGlashan, Jay Yatulis, Peter Mascher, Ian Bruce

Proceedings Volume 8412, 84121H (2012) https://doi.org/10.1117/12.2000727

KEYWORDS: Neural networks, Neurons, Field programmable gate arrays, Machine learning, Visualization, Control systems, Digital imaging, Human-machine interfaces, Imaging systems, Prototyping

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Proceedings Article | 24 October 2012 Paper

Paper

Highly efficient blue organic light-emitting diodes using dual emissive layers with host-dopant system

Bo Mi Lee, Hyeong Hwa Yu, You Hyun Kim, Nam Ho Kim, Ju An Yoon, Peter Mascher, Woo Young Kim

Proceedings Volume 8412, 841221 (2012) https://doi.org/10.1117/12.2001394

KEYWORDS: Organic light emitting diodes, Luminous efficiency, Electrons, Energy transfer, Quantum wells, Excitons, Electroluminescence, Aluminum, Electron transport, Absorption

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Proceedings Article | 8 September 2011 Paper

Paper

SOI back reflector for Tb-doped oxide electroluminescent devices

Harjinder Singh Saini, T. MacElwee, A. Rankin, J. Wojcik, A. Miles, N. G. Tarr, P. Mascher

Proceedings Volume 8007, 800710 (2011) https://doi.org/10.1117/12.905709

KEYWORDS: Silicon, Oxides, Reflectors, Terbium, Thin films, Silicon films, Silica, Absorption, Doping, Oxidation

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Proceedings Article | 1 May 2008 Paper

Paper

Cadmium telluride: a silicon-compatible optical material as an alternative technology for building all-optical photonic devices

A. Martínez, F. Cuesta-Soto, J. García, J. Martí, N. Sochinskii, M. Abellan, J. Rodríguez-Fernández, S. Mengali, A. Mercuri, C. Corsi, I. Reid, M. Robertson, S. Neretina, R. Hughes, J. Wojcik, J. Preston, P. Mascher

Proceedings Volume 6996, 699608 (2008) https://doi.org/10.1117/12.781413

KEYWORDS: Waveguides, Silicon, Zinc, Silica, Polarization, Refractive index, Etching, Nonlinear optics, Sapphire, Absorption

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Proceedings Article | 8 September 2006 Paper

Paper

Coupled luminescence centres in erbium-doped silicon rich silicon oxide thin films

D. Blakie, O. Zalloum, J. Wojcik, E. Irving, A. Knights, P. Mascher

Proceedings Volume 6343, 63433S (2006) https://doi.org/10.1117/12.708049

KEYWORDS: Silicon, Erbium, Luminescence, Ions, Electroluminescence, Annealing, Silicon films, Oxides, Thin films, Chemical species

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Monolithic integration of silicon micro-photonic devices with silicon microelectronics presents one potential solution to the interconnect bottleneck in deep submicron CMOS microprocessors. However, an inability to develop a robust silicon based electroluminescent (EL) technology continues to severely limit the feasibility of such a structure. Despite its promising photoluminescent (PL) properties, the erbium doped silicon rich silicon oxide material system has been only partly successful in EL devices owing to dielectric breakdown resulting from high field excitation requirements. However, PL data indicate that quantum confinement effects in this system enable it to overcome many of the luminescence quenching properties of bulk silicon based materials, while simultaneously offering the structural and chemical resilience which luminescent forms of silicon (eg. porous silicon) lack. However, it is now clear that the resolution of the current injection problem will require a detailed understanding of all known and especially potential luminescence excitation mechanisms. The present study compares PL measurements made for SiO_x:Er (x less than or equal to 2) thin films grown by electron cyclotron resonance plasma enhanced chemical vapour deposition. Various compositions, containing erbium concentration below 1 atomic %, have been annealed over a range of temperatures between 600-1100 °C. The presence of excess silicon relative to SiO₂ is found to result in a 100 fold increase of the PL emission near 1540 nm, resulting from the ⁴I_13/2 to ⁴I_15/2 transition of the trivalent erbium ion, relative to a sample containing no silicon excess. It has been found that luminescent silicon nano-clusters can be formed throughout the range of anneal temperatures studied. A dense array of extremely small amorphous silicon clusters is found to result in an optimized sensitization of the PL at 1540 nm for annealing at 800°C. It is proposed that in some cases, silicon nano-clusters coupled to erbium ions do not emit their intrinsic luminescence. Various oxygen-based luminescent defects are identified in this study, and they seem to exhibit a coupling to silicon nano-cluster and erbium-related centres. Possible application of these films to recently developed field-effect EL devices is discussed.

Proceedings Article | 13 October 2005 Paper

Paper

Erbium doped silicon rich silicon oxide luminescent thin films deposited by ECR-PECVD

D. Blakie, O. H. Y. Zalloum, J. Wojcik, E. Irving, A. Knights, P. Mascher

Proceedings Volume 5970, 597013 (2005) https://doi.org/10.1117/12.647885

KEYWORDS: Silicon, Erbium, Silicon films, Luminescence, Annealing, Oxides, Photons, Ions, Visible radiation, Chemical species

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Proceedings Article | 13 October 2005 Paper

Paper

CdTe:Ge/Si (100) thin films grown by pulsed laser deposition (PLD) for photonic devices

S. Neretina, R. Hughes, J. Preston, N. Sochinskii, P. Mascher

Proceedings Volume 5970, 59700Y (2005) https://doi.org/10.1117/12.627883

KEYWORDS: Silicon, Oxides, Silicon films, Germanium, Waveguides, Thin films, Refractive index, X-ray diffraction, Optical properties, Pulsed laser deposition

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Proceedings Article | 20 December 2004 Paper

Paper

Silicon nanocrystal formation in silicon-rich silicon oxide thin films

Tyler Roschuk, Jacek Wojcik, Edward Irving, Michael Flynn, Peter Mascher

Proceedings Volume 5577, (2004) https://doi.org/10.1117/12.567458

KEYWORDS: Silicon, Silicon films, Nanocrystals, Annealing, Luminescence, Refractive index, Oxides, FT-IR spectroscopy, Argon, Thin films

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Proceedings Article | 20 December 2004 Paper

Paper

Applications of defect engineering to the fabrication of silicon-based photonic devices

Phil Foster, Jonathan Doylend, Peter Mascher, Andrew Knights, Paul Coleman

Proceedings Volume 5577, (2004) https://doi.org/10.1117/12.563330

KEYWORDS: Silicon, Waveguides, Absorption, Signal attenuation, Integrated optics, Ion implantation, Ions, Silicon photonics, Photoresist materials, Spectroscopy

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Proceedings Article | 28 April 1995 Paper

Paper

Optical characterization of passivation for high-power AlxGa1-xAs-based lasers

Ivoil Koutzarov, Harry Ruda, Chandima Edirisinghe, Lech Jedral, Qiang Liu, Alan Moore, Richard Henderson, Marcel Boudreau, Mohamed Boumerzoug, Peter Mascher

Proceedings Volume 2382, (1995) https://doi.org/10.1117/12.208458

KEYWORDS: Sulfur, Etching, Oxides, High power lasers, Chlorine, Luminescence, Aluminum, Gallium arsenide, Silicon, Arsenic

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Proceedings Article | 1 January 1992 Paper

Paper

Optical emission spectroscopy as a process monitor for triod ion plating with TiN

Mohamed Boumerzoug, Peter Mascher, Douglas Nagy

Proceedings Volume 1594, (1992) https://doi.org/10.1117/12.56653

KEYWORDS: Titanium, Tin, Plasma, Nitrogen, Ions, Silicon, Coating, Plating, Process control, Emission spectroscopy

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Proceedings Article | 1 January 1992 Paper

Paper

In-situ monitoring of DC saddle-field plasma-assisted deposition of amorphous silicon and silicon nitride

Roman Kruzelecky, Mohamed Boumerzoug, Peter Mascher, Milton Harry, Stefan Zukotynski

Proceedings Volume 1594, (1992) https://doi.org/10.1117/12.56628

KEYWORDS: Silicon, Plasma, Ions, Hydrogen, Process control, Argon, Electrodes, Metrology, Amorphous silicon, Nitrogen

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Showing 5 of 18 publications

Proceedings Volume Editor (2)

SPIE Conference Volume | 11 August 2008

Photonics North 2008

SPIE Conference Volume | 29 September 2005

Photonic Applications in Devices and Communication Systems

Conference Committee Involvement (3)

Photonics North 2008

2 June 2008 | Montréal, Canada

Photonics North 2007

4 June 2007 | Ottawa, Canada

Photonic Devices

12 September 2005 | Toronto, Canada

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