Dr. Nuriel Amir Profile

Dr. Nuriel Amir

Marketing Director at KLA Israel

SPIE Involvement:

Author | Instructor

Proceedings Article | 16 March 2016 Paper

LELE CD bias offset monitor through OVL measurement

Chia Ching Lin, En Chuan Lio, Chang Mao Wang, Howard Chen, Sho Shen Lee, Henry Hsing, Kince Liu, Nuriel Amir

Proceedings Volume 9781, 978118 (2016) https://doi.org/10.1117/12.2219509

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Overlay metrology, Etching, Target detection, Time metrology, Imaging metrology, Control systems, Semiconductor manufacturing, Process control

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Proceedings Article | 24 March 2015 Paper

Overlay metrology solutions in a triple patterning scheme

Philippe Leray, Ming Mao, Bart Baudemprez, Nuriel Amir

Proceedings Volume 9424, 94240E (2015) https://doi.org/10.1117/12.2087304

KEYWORDS: Overlay metrology, Optical lithography, Etching, Semiconducting wafers, Image segmentation, Distortion, Metrology, Photomasks, Standards development, Silicon

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Proceedings Article | 19 March 2015 Paper

Overlay measurement accuracy enhancement by design and algorithm

Honggoo Lee, Byongseog Lee, Sangjun Han, Myoungsoo Kim, Wontaik Kwon, Sungki Park, DongSub Choi, Dohwa Lee, Sanghuck Jeon, Kangsan Lee, Tal Itzkovich, Nuriel Amir, Roie Volkovich, Eitan Herzel, Mark Wagner, Mohamed El Kodadi

Proceedings Volume 9424, 94242B (2015) https://doi.org/10.1117/12.2085272

KEYWORDS: Overlay metrology, Metrology, Scatterometry, Signal processing, Process control, Quality measurement, Lithography, Double patterning technology, Photomasks, Uncertainty analysis

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Proceedings Article | 19 March 2015 Paper

Scatterometry or imaging overlay: a comparative study

Simon Hsu, Yuan Chi Pai, Charlie Chen, Chun Chi Yu, Henry Hsing, Hsing-Chien Wu, Kelly Kuo, Nuriel Amir

Proceedings Volume 9424, 942409 (2015) https://doi.org/10.1117/12.2085950

KEYWORDS: Scatterometry, Overlay metrology, Photomasks, Metrology, Scatter measurement, Semiconducting wafers, Signal processing, Front end of line, Back end of line, Optical lithography

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Most fabrication facilities today use imaging overlay measurement methods, as it has been the industry’s reliable workhorse for decades. In the last few years, third-generation Scatterometry Overlay (SCOL™) or Diffraction Based Overlay (DBO-1) technology was developed, along another DBO technology (DBO-2). This development led to the question of where the DBO technology should be implemented for overlay measurements. Scatterometry has been adopted for high volume production in only few cases, always with imaging as a backup, but scatterometry overlay is considered by many as the technology of the future. In this paper we compare imaging overlay and DBO technologies by means of measurements and simulations. We outline issues and sensitivities for both technologies, providing guidelines for the best implementation of each. For several of the presented cases, data from two different DBO technologies are compared as well, the first with Pupil data access (DBO-1) and the other without pupil data access (DBO-2). Key indicators of overlay measurement quality include: layer coverage, accuracy, TMU, process robustness and robustness to process changes. Measurement data from real cases across the industry are compared and the conclusions are also backed by simulations. Accuracy is benchmarked with reference OVL, and self-consistency, showing good results for Imaging and DBO-1 technology. Process sensitivity and metrology robustness are mostly simulated with MTD (Metrology Target Designer) comparing the same process variations for both technologies. The experimental data presented in this study was done on ten advanced node layers and three production node layers, for all phases of the IC fabrication process (FEOL, MEOL and BEOL). The metrology tool used for most of the study is KLA-Tencor’s Archer 500LCM system (scatterometry-based and imaging-based measurement technologies on the same tool) another type of tool is used for DBO-2 measurements.

Finally, we conclude that both imaging overlay technology and DBO-1 technology are fully successful and have a valid roadmap for the next few design nodes, with some use cases better suited for one or the other measurement technologies. Having both imaging and DBO technology options available in parallel, allows Overlay Engineers a mix and match overlay measurement strategy, providing back up when encountering difficulties with one of the technologies and benefiting from the best of both technologies for every use case.

SPIE Journal Paper | 2 December 2014 Open Access

Techniques for improving overlay accuracy by using device correlated metrology targets as reference

Wei Jhe Tzai, Simon C. Hsu, Howard Chen, Charlie Chen, Yuan Chi Pai, Chun-Chi Yu, Chia-Ching Lin, Tal Itzkovich, Lipkong Yap, Eran Amit, David Tien, Eros Huang, Kelly T. Kuo, Nuriel Amir

JM3, Vol. 13, Issue 04, 041412, (December 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.4.041412

KEYWORDS: Metrology, Overlay metrology, Calibration, Optical filters, Etching, Semiconducting wafers, Detection and tracking algorithms, Polishing, Chemical vapor deposition, Chemical mechanical planarization

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SPIE Journal Paper | 6 October 2014 Open Access

DongSub Choi, Tal Itzkovich, Inna Tarshish-Shapir, Eros Huang, Charlie Chen, George K. Huang, Yuan Chi Pai, Jimmy C. Wu, Yu Wei Cheng, Simon C. Hsu, Chun Chi Yu, Nuriel Amir, David Tien, Kelly T. Kuo, Takeshi Kato, Osamu Inoue, Hiroki Kawada, Yutaka Okagawa, Luis Huang, Matthew Hsu, Amei Su

JM3, Vol. 13, Issue 04, 041404, (October 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.4.041404

KEYWORDS: Metrology, Overlay metrology, Calibration, Optical testing, Etching, Inspection, Scanning electron microscopy, Imaging metrology, Electron microscopes, Measurement devices

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Proceedings Article | 21 April 2014 Paper

Innovative techniques for improving overlay accuracy by using DCM (device correlated metrology) targets as reference

Wei-Jhe Tzai, Simon C. Hsu, Howard Chen, Charlie Chen, Yuan Chi Pai, Chun-Chi Yu, Chia Ching Lin, Tal Itzkovich, Lipkong Yap, Eran Amit, David Tien, Eros Huang, Kelly T. Kuo, Nuriel Amir

Proceedings Volume 9050, 90501R (2014) https://doi.org/10.1117/12.2046671

KEYWORDS: Metrology, Overlay metrology, Calibration, Optical filters, Etching, Semiconducting wafers, Chemical mechanical planarization, Detection and tracking algorithms, Polishing, Computer simulations

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Proceedings Article | 21 April 2014 Paper

Innovative fast technique for overlay accuracy estimation using archer self calibration (ASC)

Simon C. Hsu, Charlie Chen, Chun Chi Yu, Yuan Chi Pai, Eran Amit, Lipkong Yap, Tal Itzkovich, David Tien, Eros Huang, Kelly T. Kuo, Nuriel Amir

Proceedings Volume 9050, 90501N (2014) https://doi.org/10.1117/12.2046670

KEYWORDS: Overlay metrology, Calibration, Metrology, Optical filters, Lithography, Semiconducting wafers, Quality measurement, Analytical research, Microelectronics, Inspection

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Proceedings Article | 18 April 2013 Paper

Quality metric for accurate overlay control in <20nm nodes

Dana Klein, Eran Amit, Guy Cohen, Nuriel Amir, Michael Har-Zvi, Chin-Chou Kevin Huang, Ramkumar Karur-Shanmugam, Bill Pierson, Cindy Kato, Hiroyuki Kurita

Proceedings Volume 8681, 86811J (2013) https://doi.org/10.1117/12.2011454

KEYWORDS: Target detection, Semiconducting wafers, Overlay metrology, Yield improvement, Metrology, Calibration, Error analysis, Semiconductors, Manufacturing, Lithography

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Proceedings Article | 18 April 2013 Paper

Overlay accuracy calibration

Eran Amit, Dana Klein, Guy Cohen, Nuriel Amir, Michael Har-Zvi, Cindy Kato, Hiroyuki Kurita

Proceedings Volume 8681, 86811G (2013) https://doi.org/10.1117/12.2011416

KEYWORDS: Calibration, Overlay metrology, Metrology, Semiconducting wafers, Optical filters, Neodymium, Time metrology, Process control, Ions, Data modeling

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Proceedings Article | 18 April 2013 Paper

DCM: device correlated metrology for overlay measurements

Charlie Chen, George K. Huang, Yuan Chi Pai, Jimmy C. Wu, Yu Wei Cheng, Simon C. Hsu, Chun Chi Yu, Nuriel Amir, Dongsub Choi, Tal Itzkovich, Inna Tarshish-Shapir, David Tien, Eros Huang, Kelly T. Kuo, Takeshi Kato, Osamu Inoue, Hiroki Kawada, Yutaka Okagawa, Luis Huang, Matthew Hsu, Amei Su

Proceedings Volume 8681, 86812R (2013) https://doi.org/10.1117/12.2011363

KEYWORDS: Overlay metrology, Metrology, Calibration, Optical testing, Etching, Measurement devices, Scanning electron microscopy, Inspection, Lithography, Scanners

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Proceedings Article | 10 April 2013 Paper

Multi layer overlay measurement recent developments

Nuriel Amir, Nimrod Shuall, Inna Tarshish-Shapir, Philippe Leray

Proceedings Volume 8681, 86812V (2013) https://doi.org/10.1117/12.2025865

KEYWORDS: Overlay metrology, Metrology, Optical alignment, Optical lithography, Metals, Binary data, Time metrology, Double patterning technology, Personal protective equipment, Lithography

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One of the main challenges related to the growing number of Litho layers and most specifically to Multi Patterning, is the ability to align to many layers at once. In the past things were simple, the alignment tree was set so that every layer aligns to one layer and at the most is measured versus two layers, such as contact to poly and Isolation. Today, even at the 20 nm node there are double and triple patterning for critical layers such as Isolation, poly, contact and Metal 1. This forces a much more complex alignment tree and Overlay (OVL) measurement. Layers are sometimes aligned to an average of previous layers, to different layers at different orientations and disposition is done based on several measurements. This growing challenge increases the number of Overlay measurements significantly, increases the target area and present the need to make many measurement from different layers consistent. Another challenge is the increased number of recipes and the need for flexible alignment tree scheme during development. These challenges are addressed by Multi layer targets such as Triple AIM, Multilayer AIMid and the Blossom and micro-Blossom targets where alignment marks from multiple patterning steps and layers were densely populated. A single OVL reading is calculated by the metrology tool on a selected pair or multiple pair average¹. Here we propose the Multi-Layer measurement that provides an additional degree of metrology and solution to these challenges: in one measurement several overlay results are achieved, the results are always self-consistent. It allows at the same measurement grab to look back and disposition previous layers after their processing was completed. It allows a flexible alignment tree without the need to add or change targets, even during ramp and production. It reduces the number of recipes that need to be created and managed. And it also reduces significantly the area needed for the targets. In this paper we will show recent results from IMEC, on Back-End (BE) stack of four layers including one double patterning layer. We compared several target sizes, showing that such a target can fit within the Indie requirements of 10x10 μm. Results show that there is not a lot of need to compromise on performance in order to get good Multi-Layer measurements. Eventually we will describe process compatible targets which are needed more in the Front End (FE) layers. Looking forward at the increased complexity needed for future nodes and multiple pitch splitting lithography, it is encouraging to see that for Overlay we can simplify metrology instead of making it follow the complexity trend.

Showing 5 of 12 publications

Course Instructor

SC1158: Metrology of Image Placement

This course discusses metrology of pattern placement (registration, alignment, and overlay) in IC manufacture. Starting with definitions of pattern width and placement, in design and in patterned materials, it rigorously summarizes dimensional metrology. Going from dimensional metrology on photomasks to wafer alignment, then to overlay, it gradually introduces and reviews the key technologies, applications practices and limitations. In-depth coverage of optical image-based overlay metrology is leveraged to introduce Advanced Imaging-, diffraction-, and SEM-based OL metrology. Graphic accounts of how measurements are made and of metrology-process interactions, quantitative evaluations of tool- and process-related errors lead to discussion, drilling into specific technical details and general methods. As attendees begin to notice applications and technology gaps, discuss issues and propose solutions, they gain vicarious familiarity with this field and a practical understanding of how things work, expanding their know-how and technology outlook. <br/> Not required to run a metrology tool in production, this is a prerequisite for effective troubleshooting and engineering changes, continuous improvement and TD.

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