GaN and related III-nitrides find great application in optoelectronic devices like light-emitting diodes (LEDs) and hence there is an increase in their demand. Although sapphire is still considered to be the most apte substrate for the growth of GaN based LEDs, but it is certainly not the most ideal one due to its low thermal conductivity and a large lattice mismatch with GaN. Hence, for the production of high performance and highpower LEDs, sapphire is being substituted by unconventional substrates having low lattice mismatch with GaN and a relatively larger thermal conductivity. The work focuses on the performance of such GaN-based LED materials and devices on unconventional substrates. It involves the detailing of the reasons responsible for the difficulty in developing GaN-based LEDs on the unconventional substrates. The solutions to outdo these difficulties and enhance the III-nitride growth are also elaborated along with the defect control, and chip processing for each type of unconventional substrate. The techniques developed to achieve such highperformance GaN LEDs are also discussed. With this it becomes quite easy to study the progress made in this particular field of physics. We strongly believe that with constant efforts in this field the quality of GaN based LEDs on unconventional substrates can improve progressively. And in the near future, with the usage of such unconventional substrates, we can produce LEDs commercially with a varied set of applications.
Gallium nitride nanostructures have been receiving considerable attention as building blocks for nanophotonic technologies due to their unique high aspect ratios, promising the realization of photonic and biological nanodevices such as blue light emitting diodes (LEDs), short-wavelength ultraviolet nanolasers, and nanofluidic biochemical sensors. We report on the growth of hierarchical GaN nanowires (NWs) by dynamically adjusting the growth parameters using the pulsed flow metal-organic chemical vapor deposition technique. We carried out two step growth processes to grow hierarchical GaN NWs. In the first step, the GaN NWs were grown at 950°C, and in the second, we suitably decreased the growth temperature to 630°C and 710°C to grow the hierarchical structures. The surface morphology and optical characterization of the grown GaN NWs were studied by field-emission scanning electron microscopy, high-resolution transmission electron microscopy, photoluminescence, and cathodoluminescence measurements. These kinds of hierarchical GaN NWs are promising for allowing flat band quantum structures that are shown to improve the efficiency of LEDs.
Gallium nitride nanostructures have been receiving considerable attention as building blocks for nanophotonic technologies due to their unique high aspect ratios, promising the realization of photonic and biological nanodevices such as blue light emitting diodes (LEDs), short-wavelength ultraviolet nanolasers and nanofluidic biochemical sensors. In this study, we report on the hierarchical growth of GaN nanowires (NWs) by dynamically adjusting the growth parameters using pulsed flow metalorganic chemical vapor deposition (MOCVD) technique. We carried out two step growth processes to grow hierarchical GaN NWs. At the first step the GaN NWs were grown at 950°C and in the second stage, we suitably decreased the growth temperature to 710°C to grow the hierarchical structures. The surface morphology, structural and optical characterization of the grown hierarchical GaN NWs were studied by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and photoluminescence (PL) measurements, respectively. These kind of hierarchical NWs are promising to allow flat band quantum structures that are shown to improve the efficiency of light-emitting diodes.
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