InAs QD lasers emitting in the 1.3-μm-region have suitable device properties important for integrated applications and growth on silicon. Sensing applications have encouraged further development of these wavelengths for high-volume-manufacturing. Assessment of epitaxial wafers is demonstrated here by fabrication of oxide isolated broad-area edge-emitting-lasers and on-wafer characterization of 150-mm p-doped InAs QD wafers grown via MBE. We report on spatial variations through Power-Current-Voltage-Wavelength measurements with Jth of EELs calculated using current spreading structures. A 9 nm decrease in center-to-edge emission wavelengths is observed for 2mm devices, with a threshold current density variation of approximately 0.63 kA/cm2 for a particular epitaxial design.
AlAs0.56Sb0.44 is a promising avalanche material which can be grown lattice-matched to InP and therefore use InGaAs as the absorption region in a Separate Absorption and Multiplication APD (SAM-APD). The electron and hole ionisation coefficients in this material are very dissimilar and our experiments show that this leads to AlAs0.56Sb0.44 having the lowest excess noise performance of any InP based material system (F = 2.2 at M = 40) reported to date. Simulations suggest that operation at 1550 nm and 25 GB s-1 with a sensitivity of -25.7 dBm is possible in a normal incidence SAM-APD.
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