In this work we present to our knowledge the first spatial and dynamical model of semiconductor vertical-cavity surface-emitting laser (VCSEL) incorporating a spatial built-in optical waveguide created by the defect in the two-dimensional photonic crystal (PC). The PC is created by an array of air-holes etched in VCSEL. Results of investigations of power versus current and dynamic characteristics of a conventional proton-implanted VCSEL and VCSELs incorporating PC defect waveguides operating with effective index and photonic band-gap guidances are presented and discussed. Results show that the VCSELs with incorporated PC between laser mirrors provide a dramatic decrease of the power of the fundamental laser mode. Application of multiple-defect photonic band-gap (PBG) waveguides provides an additional dominance of the fundamental mode, and thus, the PC creates high-power but single-mode radiation of VCSELs which is impossible in conventional VCSELs. The VCSELs with PCs made in top mirror are characterized by an extremely low power of the radiation comparing to same VCSELs without the PC. Preliminary analysis of dynamical responses of the VCSELs show that VCSELs with PCs incorporated between laser mirrors could have slightly better modulation properties than VCSELs without PCs.
Theoretically investigated oxide-confined and proton-implanted VCSELs with incorporated single-mode defect waveguide in a two-dimensional photonic crystal. It had shown, that such defect establishes single-mode conditions in proton-implanted VCSELs omitting the gain-guidance taking place in these lasers, but same effect can be achieved in oxide-confined VCSELs with oxide layer in anti-node position. In order to check theoretical data, we fabricated a group of proton-implanted VCSELs with two-dimensional photonic crystal, but the photonic crystal did not created single-mode in practical case, probably, because of small etching depth. Experimental researches in process up to now.
A model portraying the carrier dynamics for an inhomogeneous array of quantum dots (QDs) interacting with a number of photon modes is presented. The model treats an ensemble of QDs with one confined level coupled to a wetting layer or quantum well level and explicitly considers only the electrons. The model is derived by numerically solving a set of rate equations that includes the inhomogeneity of the dot size, multimode photon modes and temperature dependence. Explicitly the inhomogeneous size distribution is included within a inhomogeneous broadening parameter and the temperature dependence within the homogeneous broadening
parameter as well as carrier thermal escape. This is similar to the well-known Sugawara model but in the Sugawara model the carriers are assumed to occupy the inhomogeneous quantum dots equally at all temperatures. Experimental and theoretical work in ref. (2) and (3) believes this is true only for a low temperature regime. Above the temperature where a global minima exists, Fermi-Dirac statistics have been used. This results in different gain and lasing behaviour for higher temperatures from those calculated using the Sugawara model.
A novel dual-purpose Vertical-Cavity Optoelectronic Component (VCOC), functioning either as a laser or a detector, is reported. The device is formed by modifying a conventional vertical-cavity surface-emitting laser so that it can additionally operate as an efficient detector. The modifications to the device, in order to improve photodetection, are achieved by etching its top facet. Avalanche operation under reverse bias is demonstrated for the first time in such a dual purpose component. In order to assess the overall device performance for communication applications, a bi-directional, half-duplex link is established in which a VCOC used as a source transmits signals to one used as a detector at bit rates up to 2 Gb/s.
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