Laser plasma accelerators produce ultra-short, low emittance electron bunches that show potential for use in multistage colliders or for seeding free electron lasers. However, to optimize these novel accelerators for such applications, new diagnostics for micron-scale beams must be developed. In this paper we present single shot coherent optical transition radiation diagnostics that measure spatial and momentum distributions of microbunched high energy electron populations at the exit of a laser plasma accelerator. We show correspondence between the measured position and momentum of the electron beamlets as well as transverse distribution reconstructions of the coherent portion of the beam on a single shot at a variety of wavelengths. Finally, we propose a scheme for a full three-dimensional reconstruction of an electron bunch through coherent transition radiation analysis.
We report the generation of a two-color terawatt (TW) laser by the insertion of a three-stage barium nitrate Raman shifter and amplifier system into a conventional Ti:sapphire chirped-pulse amplification system. The Raman subsystem produces a pulse that is shifted from 800 to 873 nm and is amplified and compressed to TW scales (140 mJ and 140 fs) and then recombined with the 45-TW 800-nm fundamental pulse.
Optical second-harmonic generation (SHG)is used as a noninvasive probe of the interfaces of Si nanocrystals (SiNCs)embedded in an SiO2 matrix. We verify experimentally that the second-harmonic polarization P(2) has a quadrupolar form proportional to (E ·∇) E as proposed in recent models based on a locally noncentrosymmetric dipolar polarization averaged over the spherical NC interface. A two-beam sum-frequency geometry is found
to enhance this polarization dramatically compared to a single-beam SHG geometry, yielding strong signals useful for scanning, spectroscopy and real time monitoring. Using this two beam geometry, we have produced non-invasive two dimensional SHG maps with few-micron resolution of 1-micron-thick layers of Si-NCs (3 and
5 nm average diameter)produced by ion implanting Si into SiO2. Samples were scanned over a 5mm x 5mm
area with two non-collinear,orthogonally polarized,amplified Ti:S laser pulses (80 fs,810nm,100 μJ,1 kHz repetition rate) while detecting the generated SH signal in transmission. The SHG signal is sensitive to chemical modification of the Si/SiO2 interface and to local gradients in nanoparticle density.
Size effects in optical second harmonic generation (SHG) from Si(001)-SiO2 planar micro-cavity structures are studied for fundamental wavelengths from 700 nm to 850 nm. The observed dependence of SHG intensity on the thickness of oxide layer is explained, in part, by an optical Casimir nonlocality arising from interference of zero-point fluctuations in micro-cavity, which is distinguished from microscopic interface effects. Detailed theoretical analysis of the Casimir nonlocal contribution to the quadratic susceptibility using a diagrammatic technique is performed for visible and IR regions. The difference in the length scale of the Casimir contribution at 800 nm and 1064 nm fundamental wavelength is discussed.
Solid state femtosecond lasers enable powerful new nonlinear optical spectroscopic characterization techniques for technologically relevant Column IV and III-V semiconductor interfaces and growth surfaces.
We present and explore an idea of creating a source of extremely short (10-15 s) coherent radiation tunable in the XUV wavelength range. The underlying physical mechanism consists in nonlinear properties of rapidly ionized atoms to efficiently convert the spectra of laser radiation in the 1015 - 1016 W/cm2 intensity range. We demonstrate that under certain conditions the nonlinear effects of high-order harmonic generation, spectrum broadening and blueshifting can be simultaneously engaged and favorably combined. This mechanism offers an attractive possibility to enter the attosecond duration range by optimizing the process of high-order harmonic excitation at the ionizing fronts of ultrashort laser pulses.
Using femtosecond pulses from a Kerr-lens Mode-Locked Ti:Sapphire laser to generate second harmonic from a series of native-oxidized Si(001)/SiO2 samples prepared with systematically varied etch- induced interfacial microroughness, we demonstrate rapid, noncontact, noninvasive measurement of Angstrom-level Si(001)/SiO2 interface roughness. These measurements were performed in air and correlated with atomic force microscopy (AFM) measurements. We also demonstrate in-situ second harmonic monitoring of Si epitaxy in two growth regimes: high temperature (approximately equals 925 K) ultra high-vacuum chemical vapor deposition (UHV-CVD) growth mode and a cyclic atomic layer epitaxy (ALE) growth mode. During UHV-CVD growth of Si on ALE-grown Si0.9Ge0.1(001), we observed interference of the second harmonic signals between the growing Si surface and the buried Si0.9Ge0.1(001) interface. In the ALE growth mode, we monitored several key stages during a full cycle of growth of a partial (approximately equals 0.42) Si monolayer on Si(001) from a disilane (Si2H6) precursor.
We have constructed a self-starting Kerr-lens mode-locked Ti:sapphire laser pumped synchronously by a mode-locked, LBO-doubled Nd:YAG laser. Using a home-built beam- pointing stabilizer, beam wander of the 532 nm pump is reduced by a factor of 25, thus enabling long term operation of TEM00 nearly transform limited pulses with amplitude, repetition rate, and pulsewidth fluctuations comparable to or better than those of Ar-pumped Ti3+:Al2O3 lasers. Interferometric autocorrelation using second harmonic in reflection from GaAs yielded a pulse width of 30 fs, limited by the dispersion of wide bandwidth cavity optics that permit tunability from 0.7 to 1.0 micrometers .
We demonstrate two complementary techniques: femtosecond ellipsometry and surface second harmonic generation, for characterization and diagnostics of semiconductor epilayers using unamplified femtosecond laser sources. Through femtosecond ellipsometry, we obtained the time-resolved change in the real and imaginary parts of the index of refraction in relaxed and strained Si1-xGex alloys. Through surface second harmonic generation in conjunction with the Kerr Lens mode-locked (KLM) Ti:Sapphire laser, we obtained surface second harmonic signals in Si(100) and Diamond(111) with an unprecedented signal-to-noise ratio.
The wavelength of ultrafast laser probes near the fundamental (E0) absorption edge falls in
the infrared and visible wavelengths in most diamond and zincblende structure semiconductors.
Consequently the time-resolved reflectivity and transmission in a photo-excited sample are
influenced by numerous factors: Drude reflectivity and free carrier absorption, in addition to
interband saturation and band gap renormalization. In this work we demonstrate the utility of
probing the higher (E1 and E2) absorption edges using two-photon absorption spectroscopy or
ultraviolet wavelength probes. 1) In silicon we probe the E2 absorption edge by direct two-photon
absorption using visible femtosecond pulses above the indirect edge. Longer pulses melt the sample
before reaching peak intensities at which two-photon absorption becomes dominant. We extract the
direct two-photon absorption coefficient over a wide spectral range, and distinguish other nonlinear
absorption channels, and relate these results to the band structure of silicon. 2) Using an ultraviolet
probe with visible pump, Drude effects and interband saturation become negligible, leaving
renormalization of the E1 and E2 edges as the dominant influence on the probe. Time-resolved
experiments compare the renormalization induced by hot carriers, cold carriers and lattice heating in
3D and 2D semiconductors.
Using amplified 100 fs, 616 nm pulses, we employed pump-probe spectroscopy to investigate strong
field interactions with gases and metal surfaces. The ionization dynamics of a gas with a pump pulse foeused
to 1016 W/cm2 were deduced from spectral shifts in a probe pulse. In addition to above threshold ionization,
impact ionization and a nonlinear dependence of the collision frequency on pulse intensity are proposed
as mechanisms for the spectral shifts. Also, the cooling time of a high-temperature solid density
plasma was measured specifically, the nonequiibrium electron energy distribution excited by a resonantly
absorbed pulse focused to 5 x 1012 W/cm2 on a metal surface was measured with a photoelectron time-offlight
detector.
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