Dr. Masahiro Miyairi Profile

Dr. Masahiro Miyairi

at Toshiba Materials Co Ltd

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Author

Publications (5)

Proceedings Article | 23 March 2012 Paper

Development of practical flare correction tool for full chip in EUV lithography

Taiga Uno, Hiromitsu Mashita, Masahiro Miyairi, Toshiya Kotani

Proceedings Volume 8322, 83221N (2012) https://doi.org/10.1117/12.916129

KEYWORDS: Optical proximity correction, Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Critical dimension metrology, Semiconducting wafers, Optical lithography, Model-based design, Computer simulations, Data corrections

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Proceedings Article | 5 April 2011 Paper

Hotspot detection using image pattern recognition based on higher-order local auto-correlation

Shimon Maeda, Tetsuaki Matsunawa, Ryuji Ogawa, Hirotaka Ichikawa, Kazuhiro Takahata, Masahiro Miyairi, Toshiya Kotani, Shigeki Nojima, Satoshi Tanaka, Kei Nakagawa, Tamaki Saito, Shoji Mimotogi, Soichi Inoue, Hirokazu Nosato, Hidenori Sakanashi, Takumi Kobayashi, Masahiro Murakawa, Tetsuya Higuchi, Eiichi Takahashi, Nobuyuki Otsu

Proceedings Volume 7974, 79740X (2011) https://doi.org/10.1117/12.881193

KEYWORDS: Lithography, Pattern recognition, Computer aided design, Feature extraction, Intelligence systems, Silicon, Photomasks, Image processing, Visualization, Graphic design

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Proceedings Article | 25 September 2010 Paper

A full chip MB-SRAF placement using the SRAF guidance map

Min-Chun Tsai, Shigeki Nojima, Masahiro Miyairi, Tatsuo Nishibe, Been-Der Chen, Hanying Feng, William Wong, Zhangnan Zhu, Yen-Wen Lu

Proceedings Volume 7823, 78233Q (2010) https://doi.org/10.1117/12.866139

KEYWORDS: SRAF, Optical proximity correction, Photomasks, Model-based design, Lithography, Mask making, Solids, Control systems, Logic, Statistical modeling

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Proceedings Article | 10 March 2010 Paper

Ultimately accurate SRAF replacement for practical phases using an adaptive search algorithm based on the optimal gradient method

Shimon Maeda, Hirokazu Nosato, Tetsuaki Matsunawa, Masahiro Miyairi, Shigeki Nojima, Satoshi Tanaka, Hidenori Sakanashi, Masahiro Murakawa, Tamaki Saito, Tetsuya Higuchi, Soichi Inoue

Proceedings Volume 7640, 764018 (2010) https://doi.org/10.1117/12.846345

KEYWORDS: SRAF, Lithography, Photomasks, Critical dimension metrology, Algorithm development, Computer simulations, Manufacturing, Image resolution, Optical lithography, Switching

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SRAF (Sub Resolution Assist Feature) technique has been widely used for DOF enhancement. Below 40nm design node, even in the case of using the SRAF technique, the resolution limit is approached due to the use of hyper NA imaging or low k1 lithography conditions especially for the contact layer. As a result, complex layout patterns or random patterns like logic data or intermediate pitch patterns become increasingly sensitive to photo-resist pattern fidelity. This means that the need for more accurate resolution technique is increasing in order to cope with lithographic patterning fidelity issues in low k1 lithography conditions. To face with these issues, new SRAF technique like model based SRAF using an interference map or inverse lithography technique has been proposed. But these approaches don't have enough assurance for accuracy or performance, because the ideal mask generated by these techniques is lost when switching to a manufacturable mask with Manhattan structures. As a result it might be very hard to put these things into practice and production flow. In this paper, we propose the novel method for extremely accurate SRAF placement using an adaptive search algorithm. In this method, the initial position of SRAF is generated by the traditional SRAF placement such as rule based SRAF, and it is adjusted by adaptive algorithm using the evaluation of lithography simulation. This method has three advantages which are preciseness, efficiency and industrial applicability. That is, firstly, the lithography simulation uses actual computational model considering process window, thus our proposed method can precisely adjust the SRAF positions, and consequently we can acquire the best SRAF positions. Secondly, because our adaptive algorithm is based on optimal gradient method, which is very simple algorithm and rectilinear search, the SRAF positions can be adjusted with high efficiency. Thirdly, our proposed method, which utilizes the traditional SRAF placement, is easy to be utilized in the established workflow. These advantages make it possible to give the traditional SRAF placement a new breath of life for low k1.

Proceedings Article | 11 May 2009 Paper

Lithography compliance check considering neighboring cell structures for robust cell design

Masahiro Miyairi, Shigeki Nojima, Shimon Maeda, Katsuyoshi Kodera, Ryuji Ogawa, Satoshi Tanaka

Proceedings Volume 7379, 737911 (2009) https://doi.org/10.1117/12.824278

KEYWORDS: Lithography, Optical proximity correction, Logic, Metals, Design for manufacturing, Manufacturing, Semiconductors, Semiconducting wafers, Process engineering, Semiconductor manufacturing

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