Semiconductor photon-counting detectors based on high atomic number, high density materials [cadmium zinc telluride (CZT)/cadmium telluride (CdTe)] for x-ray computed tomography (CT) provide advantages over conventional energy-integrating detectors, including reduced electronic and Swank noise, wider dynamic range, capability of spectral CT, and improved signal-to-noise ratio. Certain CT applications require high spatial resolution. In breast CT, for example, visualization of microcalcifications and assessment of tumor microvasculature after contrast enhancement require resolution on the order of 100 μm. A straightforward approach to increasing spatial resolution of pixellated CZT-based radiation detectors by merely decreasing the pixel size leads to two problems: (1) fabricating circuitry with small pixels becomes costly and (2) inter-pixel charge spreading can obviate any improvement in spatial resolution. We have used computer simulations to investigate position estimation algorithms that utilize charge sharing to achieve subpixel position resolution. To study these algorithms, we model a simple detector geometry with a 5×5 array of 200 μm pixels, and use a conditional probability function to model charge transport in CZT. We used COMSOL finite element method software to map the distribution of charge pulses and the Monte Carlo package PENELOPE for simulating fluorescent radiation. Performance of two x-ray interaction position estimation algorithms was evaluated: the method of maximum-likelihood estimation and a fast, practical algorithm that can be implemented in a readout application-specific integrated circuit and allows for identification of a quadrant of the pixel in which the interaction occurred. Both methods demonstrate good subpixel resolution; however, their actual efficiency is limited by the presence of fluorescent K-escape photons. Current experimental breast CT systems typically use detectors with a pixel size of 194 μm, with 2×2 binning during the acquisition giving an effective pixel size of 388 μm. Thus, it would be expected that the position estimate accuracy reported in this study would improve detection and visualization of microcalcifications as compared to that with conventional detectors.
Semiconductor based photon-counting detectors for x-ray CT have a number of advantages over energy integrat ing detectors, including reduced electronic and Swank noise, increased dynamic range, capability of spectral CT for material decomposition, and improved SNR characteristics through energy weighting. Quite a few clinical applications could benefit from high-resolution spectral CT. For example, in breast CT the visualization of mi crocalcifications and assessment of tumor microvasculature after contrast enhancement require spatial resolution on the order of 100 μm or better. A straightforward approach to increasing spatial resolution by decreasing the detector pixel size, leads to two major problems: 1) fabricating circuitry with small pixels becomes very costly, and 2) inter-pixel charge spreading can obviate any improvement in spatial resolution. In this study, we have used computer simulations to investigate position estimation algorithms that utilize charge sharing to achieve sub-pixel position resolution. To study these algorithms, we model a simple detector geometry with a pixellated
5 x 5 anode array, and use conditional probability functions modeling electron-hole charge transport in CZT. We used COMSOL Multiphysics software to map the distribution of charge pulses in the detector. Performance of two x-ray interaction position estimation algorithms were evaluated: 1) method of maximum likelihood, and
2) a fast, practical algorithm that can be realistically implemented in a readout ASIC, providing identification
of the quadrant of the pixel in which interaction occurred. Both methods exhibit good sub-pixel resolution performance, however their actual efficiency is limited by electronic noise.
KEYWORDS: Sensors, Coded apertures, Prototyping, Signal detection, Telescopes, Imaging systems, Gamma radiation, Data acquisition, Computing systems, Control systems
We have developed a prototype of a scalable high-resolution direction and energy sensitive gamma-ray detection system
that operates in both coded aperture (CA) and Compton scatter (CS) modes to obtain optimal efficiency and angular
resolution over a wide energy range. The design consists of an active coded aperture constructed from 52 individual CZT
planar detectors each measuring 3×3×6 mm3 arranged in a MURA pattern on a 10×10 grid, with a monolithic
20×20×5 mm3 pixelated (8×8) CZT array serving as the focal plane. The combined mode is achieved by using the
aperture plane array for both Compton scattering of high-energy photons and as a coded mask for low-energy radiation.
The prototype instrument was built using two RENA-3 test systems, one each for the aperture and the focal plane,
stacked on top of each other at a distance of 130 mm. The test systems were modified to coordinate (synchronize)
readout and provide coincidence information of events within a user-adjustable 40-1,280 ns window. The measured
angular resolution of the device is <1 deg (17 mrad) in CA mode and is predicted to be approximately 3 deg (54 mrad) in
CS mode. The energy resolution of the CZT detectors is approximately 5% FWHM at 120 keV. We will present details
of the system design and initial results for the calibration and performance of the prototype.
We have developed high energy and high spatial resolution two-dimensional (2D) solid-state imaging pixel
detectors and their custom integrated circuits (ICs). Solid-state pixel detectors and their readout ICs are now
regarded to be an integral part of position-sensitive semiconductor detectors such as Si, CdTe and CdZnTe for x-ray
and gamma-ray imaging. These detectors have a 2D structure. We have also developed one-dimensional (1D)
detectors, which are mostly used for scanning type imaging. The new 2D pixel detectors we have developed can be
used for both scanning and staring mode imaging applications. Because the requirements of various detector
applications tend to be diverse, a custom IC is typically designed for a specific detector array. This often lengthens
the time and raises the cost of system development. To help close the readout technology gap and facilitate advances
in this field, we have been formulating and implementing strategies for instrumenting different detectors of a given
application category with highly versatile ICs that meet a range of requirements. The solid-state pixel detectors that
have been developed within this effort are presented below.
We present the design and initial performance characterization of the XENA-2 readout IC for solid-state x-ray detector arrays. XENA-2 consists of 32 readout channels, each with charge-sensitive input amplifier, adjustable two-stage gain amplifier and five comparators with 16-bit pulse counters. Readout of the counters, over a 16-bit data bus, takes approximately 20 μs. Compared to the XENA chip, its predecessor, this new IC's main improvement is significantly reduced noise, which allows for lower comparator thresholds and increased count rates.
The RENA-3 (R
Readout E eadout Electronics for N lectronics Nuclear A uclear Applications) is a multi-channel mixed-signal integrated circuit (IC)
developed for the readout of position-sensitive solid-state detectors with excellent energy resolution. We will present
results of experiments characterizing its performance as used with a variety of spectroscopy-grade detectors currently
available in the industry, notably CZT pixel arrays as well as other detector configurations. The merits of specific
RENA-3 design features vis-à-vis different detector applications will also be discussed.
We have developed high energy and high spatial resolution 1D and 2D solid state imaging detectors and their
custom integrated circuits (ICs). Readout ICs are now regarded to be an integral part of position-sensitive
semiconductor detectors, especially for Si and CdZnTe for x-ray and gamma-ray imaging. These detectors have a
1D or 2D structure. The 1D structure types are mostly used for scanning purposes with some staring type imaging
while 2D pixel detectors can be used for both scanning and staring mode imaging applications. Because the
requirements of various detector applications tend to be diverse, a custom IC is typically designed for a specific
detector array. This often lengthens the time and raises the cost of system development. To help close the readout
technology gap and facilitate advances in this field, we have been formulating and implementing strategies for
instrumenting different detectors of a given application category with highly versatile ICs that meet a range of
requirements. The solid-state detectors and their ICs that have been developed within this effort are presented.
A linear CdZnTe pad detector array with approximately 1 mm2 pad area has been developed. The detector has a wide energy range from about 20 to 200 keV. To read out these detector arrays, a fast, low-noise monolithic mixed signal ASIC chip has been developed. A prototype x-ray imaging system consisting of the CdZnTe detector array and the monolithic ASIC chip has been fabricated and tested. In this system, the detectors are abutted against each other to form an approximately 1 m long linear array. The system has been used to take preliminary scanned images of complex objects at various energies. New results from this system will be presented.
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