Dr. Mark Kroon Profile

Dr. Mark Kroon

at Philips Research Labs

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Proceedings Article | 1 July 2002 Paper

Manufacturing sub-50-nm gratings using E-beam lithography and electroplating

Mark Kroon, Falco van Delft, Bas Ketelaars

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472278

KEYWORDS: Plating, Extreme ultraviolet, Manufacturing, Metals, Semiconducting wafers, Electroplating, Transition metals, Electron beam lithography, Scanning electron microscopy, Silicon

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In this paper we present a new method for manufacturing steeply profiled grating structures composed of narrow lines and spaces embedded in transition metal layers. We focus on making EUV transmittive grating structures typically consisting of rectangular lines that are down to 40 nm wide, around 100 nm tall, up to 100 nm long, spaced at a 1-2 micrometers pitch, and embedded in 100 nm thick nickel-iron alloy absorber layers. The method comprises the use of a molybdenum plating base deposited on a silicon nitride coated silicon wafer, electron beam writing of down to 40 nm wide and 100 nm tall lines in negative tone hydrogen silsesquioxane (HSQ) resist, and electroplating of the desired metal absorber layer in between the resist lines, using the molybdenum layer as plating base. After processing both the HSQ resist and the thin plating base can remain respectively between and below the grating structure because these materials are relatively transparent to EUV radiation. The presence of HSQ in the plated metal spaces results in a flat top surface, preventing the adhesion of contaminants. Our measurements reveal the presence of rectangular HSQ lines, characterized by near vertical side walls, a high line-width uniformity and a low line-edge roughness. These structures are subsequently embedded in a homogeneously grown absorber, characterized by a low small-scale surface roughness and high-quality overall flatness. The process window, in terms of exposure dose and pre-exposure resist treatment, has been well established for various line width and line pitch settings.

Proceedings Article | 20 August 2001 Paper

Luminescent materials for EUV detection purposes

Mark Kroon, R. Stuik

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436636

KEYWORDS: Extreme ultraviolet, Luminescence, Deep ultraviolet, Thin films, Crystals, Quartz, Annealing, Visible radiation, Diodes, Lithography

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In this paper we present the results of an elaborate study to investigate the properties of luminescent materials for EUV detection in EUV lithographic tools. The study presented here involves both bulk single crystalline samples and thin film samples. Bulk single crystalline samples with polished surfaces are industrially available, while thin film samples were home-made by performing physical vapor deposition of several luminescent materials on polished quartz substrates. Careful pre-selection of these phosphors was based on multiple strong criteria. The measured results presented here include time-resolved luminescence decay, luminescence spectra and luminescence linearity measurements under deep-UV (248 nm) and extreme-UV (13.5 nm) excitation. Our results indicate the possible use of two luminescent materials, being YAG:Ce (bulk) and CaS:Ce (thin film), for EUV detection in extreme-UV lithographic tools. Practical use of these luminescent materials, however, will require high extreme-UV powers in order to obtain a sufficient signal to noise ratio.

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