Dr. Manfred Moert Profile

Dr. Manfred Moert

at Qimonda Dresden GmbH & Co OHG

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 18 March 2009 Paper

Fabrication of metrology test structures for future technology nodes using high-resolution variable-shaped e-beam direct write

László Szikszai, Philipp Jaschinsky, Katja Keil, Marc Hauptmann, Manfred Mört, Uwe Seifert, Christoph Hohle, Kang-Hoon Choi, Frank Thrum, Johannes Kretz, Vaeriano Ferreras Paz, Arie den Boef

Proceedings Volume 7271, 72712M (2009) https://doi.org/10.1117/12.814181

KEYWORDS: Scatterometry, Metrology, Line edge roughness, Critical dimension metrology, Line width roughness, Semiconducting wafers, Electron beams, Electron beam direct write lithography, Lithography, Cadmium

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Proceedings Article | 3 October 2008 Paper

Model-free and model-based methods for dimensional metrology during the lifetime of a product

Peter Weidner, Alexander Kasic, Thomas Hingst, Carsten Ehlers, Sylke Philipp, Thomas Marschner, Manfred Moert

Proceedings Volume 7155, 71550Y (2008) https://doi.org/10.1117/12.814534

KEYWORDS: Semiconducting wafers, Scatterometry, Model-based design, Dimensional metrology, Atomic force microscopy, Infrared radiation, Metrology, Critical dimension metrology, Thermal modeling, High volume manufacturing

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Proceedings Article | 10 May 2005 Paper

Metrology of deep trench etched memory structures using 3D scatterometry

Peter Reinig, Rene Dost, Manfred Moert, Thomas Hingst, Ulrich Mantz, Jasen Moffitt, Sushil Shakya, Christopher Raymond, Mike Littau

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.599342

KEYWORDS: Scatterometry, Semiconducting wafers, Scanning electron microscopy, 3D modeling, 3D metrology, Metrology, Process control, 3D applications, Scattering, Scatter measurement

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Proceedings Article | 24 May 2004 Paper

Spectroscopic ellipsometry-based scatterometry for depth and linewidth measurements of polysilicon-filled deep trenches

Thomas Hingst, Manfred Moert, Peter Reinig, Elke Backen, Rene Dost, Peter Weidner, John Hopkins, Ted Dziura, Assim Elazami, Regina Freed

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.535646

KEYWORDS: Scatterometry, Oxides, Atomic force microscopy, Semiconducting wafers, 3D metrology, Silicon, Process control, Scatter measurement, 3D modeling, Etching

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Proceedings Article | 2 June 2003 Paper

Spectroscopic Ellipsometry based Scatterometry enabling 193nm Litho and Etch process control for the 110nm technology node and beyond

Thomas Hingst, Thomas Marschner, Manfred Moert, Jan Homilius, Marco Guevremont, John Hopkins, Assim Elazami

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485011

KEYWORDS: Scatterometry, Semiconducting wafers, Single crystal X-ray diffraction, Photomasks, Critical dimension metrology, Process control, Scatter measurement, Scanning electron microscopy, Finite element methods, Spectroscopic ellipsometry

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