Advancements in semiconductor materials, particularly within Group IV, are crucial to meet the demand for efficient and adaptable laser sources. Germanium-tin (GeSn) alloys have emerged as promising candidates, facilitating full monolithic integration into silicon photonics. Progress in optically pumped GeSn lasers is remarkable, but electrically injected ones face challenges due to low index contrast to effectively confine the optical mode. We propose an electrically pumped laser design based on GeSnOI (GeSn On Insulator) scheme. Modal analysis was performed at 2500 nm wavelength using finite element method, optimizing electromagnetic wave confinement, and mitigating direct electrical contact deposition on the active zone. Simulation results indicated that the most effective fabrication approach involves bonding with another silicon substrate using SiN dielectric layer as cladding, thus taking advantage of high optical index contrast. This advancement heralds the potential for room temperature operation of electrically pumped lasers.
GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Since the first demonstration of lasing with GeSn alloys up to 100 K, many researches were devoted to increase the laser operation up to room temperature. We will discuss the band sructure requirements and the practical issues that have to be addressed in order to reach robust gain with increasing temperature. We show that misfit defects managment and strain engineering are key ingredients. For that purpose we developped a GeSn-On-Insulator platform, that combine strain engineering , defective interfacial layer removal and laser resonator designs ad fabrication. Here we show that room temperature lasing, up to 300 K, can be obtained in microdisk resonators fabricated on a GeSnOI layer both with using high Sn-content in the gain medium, e. g. 17% or with applying tensile strain to a layer with lower Sn-content of 14%.
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