Dr. Lucy L. Zheng Profile

Dr. Lucy L. Zheng

at Institute for Defense Analyses

SPIE Involvement:

Editor | Author

Proceedings Article | 30 May 2022 Presentation

Post-VISTA progress in III-V material SLS IR detector technology

Sumith Bandara, Leslie Aitcheson, Lucy Zheng, Meimei Tidrow

Proceedings Volume 12107, 121070N (2022) https://doi.org/10.1117/12.2623303

KEYWORDS: Laser sintering, Infrared detectors, Superlattices, Staring arrays, Sensor technology, Infrared sensors, Infrared radiation, Antimony

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Proceedings Article | 12 April 2021 Presentation

III-V material superlattice infrared focal plane array technology

Sumith Bandara, Meimei Tidrow, Leslie Aitcheson, Lucy Zeng, Neil Baril

Proceedings Volume 11741, 117410O (2021) https://doi.org/10.1117/12.2586326

KEYWORDS: Staring arrays, Infrared radiation, Superlattices, Infrared materials, Infrared imaging, Infrared detectors, Gallium antimonide, Manufacturing, Long wavelength infrared, Imaging systems

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Proceedings Article | 12 April 2021 Presentation

Welcome and Introduction to SPIE Conference 11741

Bjørn Andresen, Gabor Fulop, Lucy Zheng

Proceedings Volume 11741, 1174107 (2021) https://doi.org/10.1117/12.2596542

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Proceedings Article | 21 May 2011 Paper

Update on III-V antimonide-based superlattice FPA development and material characterization

Lucy Zheng, Meimei Tidrow, Sumith Bandara, Leslie Aitcheson, Tiffany Shih

Proceedings Volume 8012, 80120S (2011) https://doi.org/10.1117/12.888093

KEYWORDS: Superlattices, Staring arrays, Sensors, Semiconducting wafers, Data modeling, Diodes, Gallium antimonide, Quantum efficiency, Mercury cadmium telluride, Doping

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Much progress has been made in the past 2 years in developing III-V antimonide-based superlattice infrared detectors and focal plane arrays (FPAs). In the area of detector material growth by molecular beam epitaxy, the wafer foundry group, helped by government-trusted entities and other partnering institutions, has leapfrogged many years of R&D effort to become the premier detector wafer supplier. The wafers produced are of high quality as measured by surface morphology, defect density, photoluminescence property, high-resolution X-ray diffraction, and diode current-voltage characteristics. In the area of detector design and FPA processing, the team-consisting of members from government laboratories, academia, and the FPA industry-has made rapid progress in device structure design, detector array etching, passivation, hybridization, and packaging. The progress is reflected in the steady reduction in FPA median darkcurrent density and improvement in median quantum efficiency, as well as reasonably low median noise-equivalent different temperature under 300 K scene background, when compared with the performance from some of the commercially available HgCdTe FPAs. In parallel with the FPA research and development effort, a small amount of funding has been devoted to measuring minority carrier lifetimes and to understanding life-killing defects and mechanisms of superlattice devices. Results of direct time-resolved photoluminescence measurement on superlattice absorbers indicate relatively short lifetimes (on the order of 30 ns) due to Shockley-Read-Hall mechanism. Modeling and curve fitting with diode current-voltage data indicate longer minority carrier lifetimes, although the best fit lifetime values differ greatly, possibly due to the difference in material quality and device structure. Several models or hypotheses have been proposed to explain experimental data. More data are required to validate these models and hypotheses. Further work is also necessary to reconcile the substantially different results from different groups and to truly understand the physics of minority carrier lifetimes, which is necessary to improve the lifetime and realize the theoretical promise of superlattice materials.

Proceedings Article | 4 May 2010 Paper

Developing high-performance III-V superlattice IRFPAs for defense: challenges and solutions

Lucy Zheng, Meimei Tidrow, Leslie Aitcheson, Jerry O'Connor, Steven Brown

Proceedings Volume 7660, 76601E (2010) https://doi.org/10.1117/12.852239

KEYWORDS: Staring arrays, Superlattices, Sensors, Quantum efficiency, Semiconducting wafers, Readout integrated circuits, Mercury cadmium telluride, Infrared detectors, Sensor performance, Long wavelength infrared

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The antimonide superlattice infrared detector technology program was established to explore new infrared detector materials and technology. The ultimate goal is to enhance the infrared sensor system capability and meet challenging requirements for many applications. Certain applications require large-format focal plane arrays (FPAs) for a wide field of view. These FPAs must be able to detect infrared signatures at long wavelengths, at low infrared background radiation, and with minimal spatial cross talk. Other applications require medium-format pixel, co-registered, dual-band capability with minimal spectral cross talk. Under the technology program, three leading research groups have focused on device architecture design, high-quality material growth and characterization, detector and detector array processing, hybridization, testing, and modeling. Tremendous progress has been made in the past few years. This is reflected in orders-of-magnitude reduction in detector dark-current density and substantial increase in quantum efficiency, as well as the demonstration of good-quality long-wavelength infrared FPAs. Many technical challenges must be overcome to realize the theoretical promise of superlattice infrared materials. These include further reduction in dark current density, growth of optically thick materials for high quantum efficiency, and elimination of FPA processing-related performance degradation. In addition, challenges in long-term research and development cost, superlattice material availability, FPA chip assembly availability, and industry sustainability are also to be met. A new program was established in 2009 with a scope that is different from the existing technology program. Called Fabrication of Superlattice Infrared FPA (FastFPA), this 4-year program sets its goal to establish U.S. industry capability of producing high-quality superlattice wafers and fabricating advanced FPAs. It uses horizontal integration strategy by leveraging existing III-V industry resources and taking advantage of years of valuable experiences amassed by the HgCdTe FPA industry. By end of the program span, three sets of FPAs will be demonstrated-a small-format long-wave FPA, a large-format long-wave FPA, and a medium-format dual-band FPA at long-wave and mid-wave infrared.

Proceedings Article | 7 May 2009 Paper

Recent success on SLS FPAs and MDA's new direction for development

Meimei Tidrow, Lucy Zheng, Hank Barcikowski, James Wells, Leslie Aitcheson

Proceedings Volume 7298, 72981O (2009) https://doi.org/10.1117/12.822879

KEYWORDS: Laser sintering, Staring arrays, Mercury cadmium telluride, Long wavelength infrared, Quantum efficiency, Infrared sensors, Superlattices, Defense and security, Infrared materials, Gallium antimonide

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Proceedings Article | 1 February 2008 Open Access

Type II strained layer superlattice: a potential infrared sensor material for space

L. Zheng, M. Tidrow, A. Novello, H. Weichel, S. Vohra

Proceedings Volume 6900, 69000F (2008) https://doi.org/10.1117/12.768420

KEYWORDS: Superlattices, Staring arrays, Infrared radiation, Mercury cadmium telluride, Sensors, Long wavelength infrared, Infrared sensors, Infrared detectors, Missiles, Defense and security

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Showing 5 of 7 publications

SPIE Conference Volume | 26 July 2023

Infrared Technology and Applications XLIX

SPIE Conference Volume | 5 July 2022

Infrared Technology and Applications XLVIII

SPIE Conference Volume | 15 June 2021

Infrared Technology and Applications XLVII

SPIE Conference Volume | 24 June 2020

Infrared Technology and Applications XLVI

Conference Committee Involvement (19)

Infrared Technology and Applications XLIX

30 April 2023 | Orlando, Florida, United States

Infrared Technology and Applications XLVIII

3 April 2022 | Orlando, Florida, United States

Infrared Technology and Applications XLVII

12 April 2021 | Online Only, Florida, United States

Infrared Technology and Applications XLVI

27 April 2020 | Online Only, California, United States

Infrared Technology and Applications XLV

14 April 2019 | Baltimore, MD, United States

Infrared Technology and Applications XLIV

16 April 2018 | Orlando, FL, United States

Infrared Technology and Applications XLIII

9 April 2017 | Anaheim, CA, United States

Infrared Technology and Applications XLII

18 April 2016 | Baltimore, MD, United States

Infrared Technology and Applications XLI

20 April 2015 | Baltimore, MD, United States

Infrared Technology and Applications XL

5 May 2014 | Baltimore, MD, United States

Infrared Technology and Applications XXXIX

29 April 2013 | Baltimore, Maryland, United States

Infrared Technology and Applications XXXVIII

23 April 2012 | Baltimore, Maryland, United States

Infrared Technology and Applications XXXVII

25 April 2011 | Orlando, Florida, United States

Infrared Technology and Applications XXXVI

5 April 2010 | Orlando, Florida, United States

Chemical and Biological Sensors for Industrial and Environmental Monitoring III

12 September 2007 | Boston, MA, United States

Chemical and Biological Sensors for Industrial and Environmental Monitoring II

3 October 2006 | Boston, Massachusetts, United States

Chemical and Biological Sensors for Industrial and Environmental Security

25 October 2005 | Boston, MA, United States

Chemical and Biological Point Sensors for Homeland Defense II

26 October 2004 | Philadelphia, Pennsylvania, United States

Chemical and Biological Point Sensors for Homeland Defense

29 October 2003 | Providence, RI, United States

Showing 5 of 19 Conference Committees

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