Single crystal silicon carbide (SiC), the third-generation semiconductor material, has many advantages, such as wide band gap, low thermal expansion coefficient and high thermal conductivity, etc. It has a wide application space in the field of electronic equipment. Its surface quality has great influence on the performance of electronic devices. Therefore, the ultrasmooth polishing of single crystal silicon carbide is very important. At present, the main problems of single crystal silicon carbide processing are poor surface quality and low removal efficiency. In this paper, the ultra-smooth and efficient polishing of single crystal silicon carbide materials is the main research goal. The polishing experiment is carried out by using a uniaxial polishing machine, and the computer-controlled optical shaping (CCOS) immersion polishing is introduced. To achieve super smooth and efficient polishing of single crystal silicon carbide, the corresponding polishing fluid was prepared by Fenton reaction for chemical mechanical polishing (CMP), and KMnO4 polishing fluid was also used for CMP. A series of experiments were carried out by setting different process parameters. The effects of pH value of Fenton fluid, catalyst concentration, type of polishing pad on polishing efficiency and surface roughness were studied, and the influence rules on polishing effect were summarized, so as to seek the optimal process parameters and realize ultrasmooth and low defect polishing of single crystal silicon carbide by combination.
Monocrystalline silicon reflectors are widely used in infrared high energy laser systems. In order to ensure the system to achieve high precision and high stability of beam transmission, the reflector needs to have a good laser load capacity for high power density laser under long time irradiation. However, the evaluation of reflector laser load capacity is influenced by multiple factors, which is difficult to be decoupled one by one, and the multiple index systems are not perfect. In this paper, multi-modal characterization methods such as reflectivity, fluorescence detection and surface roughness detection are proposed to establish the influence model of multiple influencing factors on the laser load capacity of monocrystalline silicon reflector. Through quantitative analysis of these defects with specific types and different properties, the surface cleanliness and integrity of the monocrystalline silicon reflector were analyzed from different angles, and the influence trend of each influencing factor on the laser load capacity of the element was obtained. In this paper, a relatively completed characterization system of monocrystalline silicon and the influence model of the laser load capacity of the monocrystalline silicon reflector have been established effectively. The influencing factors of the laser load capacity on the surface of the monocrystalline silicon reflector are evaluated effectively, which lays a foundation for the efficient acquisition of the monocrystalline silicon reflector with high load capacity.
This paper proposes an interferometry method based on a fixed interferometer structure and locally compensated stitching. The subaperture measurement is completed by applying a double-optical-wedge compensator in the "rugged" area of the surface that cannot be measured. The data of the measured area is stitched to obtain the local surface shape. The calibration of the double-optical-wedge compensator is performed by using a standard mirror. Surface figure error (SFE) of the standard mirror is measured by an interferometer beforehand. Compared with the SFE measured after adding the compensator in the optical path, the phase and aberration of the double-optical-wedge can be obtained. Measured data is processed by the subaperture stitching algorithm. Through the weighted fusion algorithm, the corresponding data values on the overlapping areas are weighted, and different weights are assigned to different areas to make the stitching transition smooth. Based on the principle of interferometry, a double-optical-wedge compensation measurement system is designed and implemented. A simulation model of the measurement experiment is presented, and the validity of the method is verified by simulation.
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