Mr. KyungHo Kim Profile

KyungHo Kim

Sir Director at Auros Technology Inc

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 20 September 2013 Paper

Study of ion beam damage in magnetic tunnel junction on FIB prepared samples

Kwangho Park, Cheolwoong Yang, Kyuchul Kim, Dongwoo Nam, Kyuman Hwang, Junsoo Bae, Juhyeon Ahn, Jin Choi, Soonoh Park, Sangsup Jeong, Hanku Cho, Eunseung Jeong

Proceedings Volume 8819, 88190I (2013) https://doi.org/10.1117/12.2026767

KEYWORDS: Ion beams, Ions, Magnetism, Transmission electron microscopy, Silicon, Oxides, Semiconducting wafers, Resistance, Gallium, Ferromagnetics

Read Abstract +

Magnetic Random Access Memory (MRAM) has emerged as the leading candidate for future universal memory due to its non-volatility, excellent endurance and read/write performance. The magnetic tunnel junction (MTJ) is a data storage element in MRAM and is basically composed of two ferromagnetic layers separated by the magnesium oxide (MgO) tunnel barrier. MgO between two ferromagnetic layers was adopted to enlarge the resistance difference between two kinds of magnetic arrangements by tunneling current through MgO. Like this, it is important to understand characterization of MgO for developing Mram. Due to thin thickness of MgO, FIB milling should be used for the preparation of TEM specimens in Mram. The major problem in MgO sampling by FIB milling is the transform of MgO between two ferromagnetic due to FIB induced damage, which leads to high tunnel current through MgO and high resistance difference between two kinds of magnetic arrangements. An understanding of FIB generated artifact on MgO is important to analysis Mram and to optimize the sample preparation process. The normal ion beam damage are compared with low-keV FIB ion beam damage on blanket MgO wafer. Experiments were performed using Helios 450 FIB(FEI) and XV-200TBs(SII) with gallium ion sources operated at 30 keV to 2 keV, respectively. As a preliminary, the thicknesses of all specimens were fixed at 100nm for the final ion beam milling currents of 210 pA(30 keV) by Helios 450 FIB(FEI). Specimens of 100nm were transferred to low-keV FIB (Helios 450/XV-200TBs) to do the low-keV ion milling. Then each specimen had a 2 keV cleaned surface and a 30 keV FIB prepared surface. In this paper, we understand the normal ion beam damage on blanket MgO through changing beam current and beam voltage. Then we present the optimized recipe and which equipment is better to analysis.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years