This paper describes a novel technology Variable Sensitivity Detection (VSD) for de-sensing SRAF nuisance
defects in a mask inspection system. The point of our approach is to search the nearest thin-line to each defect
candidate and estimate the line-width with transmitted and reflected images. The dependence of transmitted
and reflected image contract on line-width is calculated with a rigorous model. This technology de-senses lineend
shortening and edge roughness of SRAF patterns without compromising sensitivity to main features. Total
counts of SRAF nuisance detection were drastically reduced. The VSD technology was implemented to a platform
of Nuflare NPI-5000PLUS.
We have developed a mask inspection system using 199nm inspection light wavelength. This system performs
transmission and reflection inspection processes concurrently within two hours per plate. By the evaluation result of
mask images and inspection sensitivity, it is confirmed that the 199nm inspection system has the advantage over the
system using 257nm and has the possibility corresponding to next generation mask inspection. Furthermore, advanced
die-to-database (D-DB) inspection, which can generate high-fidelity of a reference image based on the CAD data for
alternating phase shift mask (PSM) or tri-tone, is required for next generation inspection system, too. Therefore, a
reference image generation method using two-layer CAD data has been developed. In this paper, the effectiveness of
this method is described.
Mask inspection has become a much more important factor in LSI manufacturing. In order to perform mask inspection with high reliability for devices of 100-130 nm rule and below, a high-resolution and high-speed die-to-database inspection system is indispensable. In order to satisfy these requirements, the Toshiba MC-3500, a next-generation mask inspection system using 257nm DUV short wavelength optics, has been developed. The MC-3500 employs a die-to-database comparison method and a high-performance data processing system that is newly developed. This paper reports the system configuration, basic characteristics for defect detection and inspection performance.
Binary (Chromium) and, KrF/ArF phase shift masks (PSM) were inspected by MC-3000, which uses DUV (257nm) light source, and an evaluated results of these sensitivities are shown. In the case of the chromium mask, sufficient detection sensitivity for 130nm-device inspection was obtained. For KrF and ArF phase shift masks, the detection sensitivities of the edge and the corner areas are practically equivalent to that of chromium. Though the detection sensitivity of a minute pinhole is slightly lower under the influence of the diffracted light. With an ArF phase shift mask, the contrast of absorber and a glass portion is low, and so improvement of the signal noise ratio of a sensor becomes essential for false-defect control. Additionally, the minute pinhole detection sensitivity will be higher, if a reflective inspection etc. is carried out.
Whereas critical-dimension (CD) error below 35 nm and transmission error below 3.5% are required for 256 M DRAM, a present-day cutting-edge inspection system may fail to detect 150 nm CD error or 6% transmission error. Improvement of defect inspection is, therefore, necessary to raise yields of semiconductor devices. A new inspection algorithm has been developed for CD error and transmission error of photomask patterns by calculating the average transmission error. Experimental results show as small as 4% transmission error or over 25 nm CD error of hole pattern will be detected without any false alarms.
This paper describes a reference data generation method applied to a newly developed photolithographic mask inspection system, the MC-2000, for 256 Mbit and 1 Gbit DRAMs. The MC-2000, which utilizes i-line wavelength optics, is designed to have a defect detection capability as fine as 0.2 micrometers . A new reference data generation method employing a gray map pattern is effective for system performance in terms of accuracy of the map pattern and speed of the map data handling. Notable features of the gray map pattern generation method are simple algorithm and ease of hardware implementation. Corner pattern rounding circuit, re-sizing circuit, and reference data calculation have been developed together and are described, too. The proposed method was evaluated and an example of the detection of 0.2 micrometers defect is reported.
For mask defect inspection in 256 Mbit and 1 Gbit DRAMs, it is necessary to have high sensitivity of 0.2 - 0.1 micrometer. A new die-to-database mask inspection system MC-2000 for 256 Mbit and 1 Gbit DRAMs has been developed. This system has high resolution optics with i-line light and high NA lens, and high speed and high accuracy data processing circuit by new multilevel bit map pattern generator, so the system has both high detectability and high throughput. This paper describes system configuration which include optical system and mechanical system, the defect inspection method, and inspection performance including defect sensitivity.
This paper describes a new image-processing algorithm for classifying photomask defects as pindots or contamination as a step toward automated inspection equipment for the one-micron generation. To detect contamination on quartz, our method extracts the gradient of the transmitted image within the dark region of reflected image. Contamination on the opaque membrane can also be detected by using the same method but with the transmitted image and reflected image mutually transposed. Standard particles of 0.3 to 0.5 micron can be detected with particles on quartz and particles on opaque membrane separated.
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