As today’s world is unthinkable without light emitting devices, questions of throughput, yield and tight control of the ever-increasing specifications become an increasingly important topic in semiconductor device production. Especially the first steps in the value chain – epitaxy and plasma etching – are both complex and crucial for the quality and yield of the final devices. In this presentation, we will discuss the capabilities of optical in-situ metrology for both the epitaxial and the plasma etch process. We will demonstrate that the precision of the in-situ control can be substantially increased when the metrology is connected across the different processes and measurement results are used to analyse downstream processes. Also for post-epitaxial 2D wafer mapping, that is used for characterizing wafer uniformity, the analysis capabilities are strongly extended, when layer thickness information of the whole layer stack are available from the in-situ metrology of the previous growth. In the talk we will show examples from different opto-electronical devices and highlight new developments in metrology.
Optical semiconductor devices such as light emitting diodes (LED) and semiconductor lasers are widely used today in a constantly growing variety of applications. Epitaxial growth by MOCVD is one of the first and even most complex manufacturing step in the production of these devices. Tightening industry requirements in terms of cost reduction and yield improvement have led to an increased usage of in-situ metrology for advanced process control in MOCVD. Consequently, optical in-situ metrology has become an integral part of process control in the production of optical semiconductor devices. In this talk we will present recent improvements of the optical in-situ metrology equipment. This will include real wafer temperature measurements, UV-based reflectometry and full spectroscopic reflectance measurements, which are perfectly suited for studying complex heterostructures. We will also show examples for close-loop control concepts that provide direct benefit to manufacturing.
The epitaxial growth of UV-C-LED-structures in metal organic vapor phase epitaxy is very challenging. To control and improve the growth process, optical in-situ metrology is therefore indispensable. However, the in-situ metrology itself is also affected by some of the process related circumstances such as patterned substrates or thin layer thickness. In this talk we will provide insight into the challenges and benefits of in-situ metrology during growth of UV-C-LED-structures and we will show how these issues can be overcome. We will also show, that these advanced techniques can also be used to improve epitaxy of other optical devices besides UV-LEDs.
Development and manufacturing of LED structures is still driven by production cost reduction and performance improvements. Therefore, in-situ monitoring during the epitaxial process plays a key role in view of further yield improvement and process optimization. With the continuing trend towards larger wafers, stronger bow and increased aspherical curvature are additional challenges the growers have to face, leading to non-uniform LED-emission. Compared to traditional in-situ metrology like curvature measurement and near UV pyrometry, in-situ photoluminescence measurements can provide a more direct access to the quantum well emission already during growth. In this paper we show how in-situ photoluminescence measurements can be used in a production type multi-wafer MOCVD system to characterize the quantum well emission already during growth. We also demonstrate how deviations from the desired wavelength can be detected and corrected in the same growth run. Since the method is providing spatially resolved line-scans across the wafer, also the uniformity of the emission wavelength can be characterized already during growth. Comparison of in-situ and ex-situ photoluminescence data show excellent agreement with respect to wavelength uniformity on 4 inch wafers.
Conference Committee Involvement (9)
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Light-Emitting Devices, Materials, and Applications XXV
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Light-Emitting Devices, Materials, and Applications XXIV
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