Mr. Kazuo Tawarayama Profile

Kazuo Tawarayama

at Toshiba Corp

SPIE Involvement:

Author

Publications (22)

Proceedings Article | 8 April 2011 Paper

Manufacturability of 2x-nm devices with EUV tool

Kazuo Tawarayama, Yumi Nakajima, Suigen Kyoh, Hajime Aoyama, Kentaro Matsunaga, Shunko Magoshi, Satoshi Tanaka, Yumi Hayashi, Ichiro Mori

Proceedings Volume 7969, 79691L (2011) https://doi.org/10.1117/12.879333

KEYWORDS: Extreme ultraviolet lithography, Manufacturing, Reactive ion etching, Extreme ultraviolet, Lithography, Lithographic illumination, Semiconducting wafers, Yield improvement, Semiconductors, Photoresist processing

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Proceedings Article | 7 April 2011 Paper

CD correction for half pitch 2x-nm on extreme ultraviolet lithography

Hajime Aoyama, Yuusuke Tanaka, Kazuo Tawarayama, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Toshihiko Tanaka, Alan Myers, Yashesh Shroff, Tetsunori Murachi, Gilroy Vandentop, Ichiro Mori

Proceedings Volume 7969, 79691J (2011) https://doi.org/10.1117/12.878672

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Extreme ultraviolet lithography, Logic, Photomasks, Optical proximity correction, Model-based design, Lithography, Point spread functions, Electronic design automation

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Proceedings Article | 5 April 2011 Paper

Resolution capability of SFET with slit and dipole illumination

Yuusuke Tanaka, Kentaro Matsunaga, Shunko Magoshi, Seiichiro Shirai, Kazuo Tawarayama, Hiroyuki Tanaka

Proceedings Volume 7969, 79690Q (2011) https://doi.org/10.1117/12.870332

KEYWORDS: Line width roughness, Extreme ultraviolet lithography, Semiconducting wafers, Photomasks, Extreme ultraviolet, Wafer-level optics, Modulation, Control systems, Projection systems, Lithography

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SPIE Journal Paper | 1 April 2011

Light-shield border impact on the printability of extreme-ultraviolet mask

Takashi Kamo, Kazuo Tawarayama, Yuusuke Tanaka, Yukiyasu Arisawa, Hajime Aoyama, Toshihiko Tanaka, Osamu Suga

JM3, Vol. 10, Issue 02, 023001, (April 2011) https://doi.org/10.1117/12.10.1117/1.3574117

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Multilayers, Reflectivity, Deep ultraviolet, Lithography, Semiconducting wafers, Reticles, Visible radiation

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Proceedings Article | 29 March 2011 Paper

Evaluation of EUV mask defect using blank inspection, patterned mask inspection, and wafer inspection

Takashi Kamo, Tsuneo Terasawa, Takeshi Yamane, Hiroyuki Shigemura, Noriaki Takagi, Tsuyoshi Amano, Kazuo Tawarayama, Mari Nozoe, Toshihiko Tanaka, Osamu Suga, Ichiro Mori

Proceedings Volume 7969, 79690J (2011) https://doi.org/10.1117/12.879551

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Wafer inspection, Defect detection, Extreme ultraviolet, Printing, Scanning electron microscopy, Multilayers, Extreme ultraviolet lithography

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Proceedings Article | 29 September 2010 Paper

Printability of EUVL mask defect detected by actinic blank inspection tool and 199-nm pattern inspection tool

Takashi Kamo, Tsuneo Terasawa, Takeshi Yamane, Hiroyuki Shigemura, Noriaki Takagi, Tsuyoshi Amano, Toshihiko Tanaka, Kazuo Tawarayama, Osamu Suga, Ichiro Mori

Proceedings Volume 7823, 78231U (2010) https://doi.org/10.1117/12.864305

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Extreme ultraviolet lithography, Defect detection, Particles, Extreme ultraviolet, Scanning electron microscopy, Lithography, Printing

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Proceedings Article | 27 May 2010 Paper

Thin absorber EUV mask with light-shield border of etched multilayer and its lithographic performance

Takashi Kamo, Hajime Aoyama, Yukiyasu Arisawa, Kazuo Tawarayama, Toshihiko Tanaka, Osamu Suga

Proceedings Volume 7748, 774805 (2010) https://doi.org/10.1117/12.867774

KEYWORDS: Photomasks, Reflectivity, Extreme ultraviolet lithography, Multilayers, Extreme ultraviolet, Lithography, Semiconducting wafers, Coating, Reticles, Deep ultraviolet

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Proceedings Article | 23 March 2010 Paper

Fabrication of 35nm via-hole patterns for interconnect test chips with EUV lithography

Yuusuke Tanaka, Hajime Aoyama, Kazuo Tawarayama, Shunko Magoshi, Daisuke Kawamura, Kentaro Matsunaga, Takashi Kamo, Yukiyasu Arisawa, Taiga Uno, Hiroyuki Tanaka, Naofumi Nakamura, Eiichi Soda, Noriaki Oda, Shuichi Saito, Ichiro Mori

Proceedings Volume 7636, 76362D (2010) https://doi.org/10.1117/12.846315

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Optical proximity correction, Metals, Extreme ultraviolet, Semiconducting wafers, Critical dimension metrology, Semiconductors, Anisotropy, Error analysis

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Proceedings Article | 23 March 2010 Paper

Applicability of extreme ultraviolet lithography to fabrication of half pitch 35nm interconnects

Hajime Aoyama, Yuusuke Tanaka, Kazuo Tawarayama, Naofumi Nakamura, Eiichi Soda, Noriaki Oda, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Kentaro Matsunaga, Daisuke Kawamura, Toshihiko Tanaka, Hiroyuki Tanaka, Shuichi Saito, Ichiro Mori

Proceedings Volume 7636, 76361N (2010) https://doi.org/10.1117/12.846325

KEYWORDS: Extreme ultraviolet lithography, Critical dimension metrology, Optical proximity correction, Semiconducting wafers, Photomasks, Etching, Photoresist processing, Overlay metrology, Lithography, Scanning electron microscopy

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Proceedings Article | 23 March 2010 Paper

Process liability evaluation for beyond 22nm node using EUVL

Kazuo Tawarayama, Hajime Aoyama, Kentaro Matsunaga, Yukiyasu Arisawa, Taiga Uno, Shunko Magoshi, Suigen Kyoh, Yumi Nakajima, Ryoichi Inanami, Satoshi Tanaka, Ayumi Kobiki, Yukiko Kikuchi, Daisuke Kawamura, Kosuke Takai, Koji Murano, Yumi Hayashi, Ichiro Mori

Proceedings Volume 7636, 76361O (2010) https://doi.org/10.1117/12.846265

KEYWORDS: Extreme ultraviolet lithography, Semiconducting wafers, Manufacturing, Lithography, Etching, Extreme ultraviolet, Photoresist processing, Reactive ion etching, Silica, Metals

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SPIE Journal Paper | 1 October 2009

Recent progress in developing an extreme ultraviolet full-field exposure tool at Selete

Kazuo Tawarayama, Hajime Aoyama, Shunko Magoshi, Yuusuke Tanaka, Seiichiro Shirai, Hiroyuki Tanaka

JM3, Vol. 8, Issue 04, 041510, (October 2009) https://doi.org/10.1117/12.10.1117/1.3275786

KEYWORDS: Semiconducting wafers, Optical alignment, Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Photoresist processing, Photomasks, Overlay metrology, Image processing, Semiconductors

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SPIE Journal Paper | 1 October 2009

Process liability evaluation for extreme ultraviolet lithography

Hajime Aoyama, Kazuo Tawarayama, Yuusuke Tanaka, Daisuke Kawamura, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Toshihiko Tanaka, Toshiro Itani, Hiroyuki Tanaka, Yumi Nakajima, Ryoichi Inanami, Kosuke Takai, Koji Murano, Takeshi Koshiba, Kohji Hashimoto, Ichiro Mori

JM3, Vol. 8, Issue 04, 041508, (October 2009) https://doi.org/10.1117/12.10.1117/1.3238542

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Critical dimension metrology, Point spread functions, Semiconducting wafers, Lithography, Photoresist processing, Semiconductors, Projection systems, Tungsten

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Proceedings Article | 18 March 2009 Paper

Fabrication of half-pitch 32-45-nm SRAM patterns with EUVL

Yuusuke Tanaka, Hajime Aoyama, Shunko Magoshi, Kazuo Tawarayama, Seiichiro Shirai, Hiroyuki Tanaka

Proceedings Volume 7271, 72713S (2009) https://doi.org/10.1117/12.813492

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Lithography, Optical proximity correction, Metals, Semiconducting wafers, Optical lithography, Photography, Scanners

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Proceedings Article | 18 March 2009 Paper

Performance evaluation of source collector module for extreme ultraviolet small-field exposure tool

Shunko Magoshi, Seiichiro Shirai, Hideto Mori, Kazuo Tawarayama, Yuusuke Tanaka, Hiroyuki Tanaka

Proceedings Volume 7271, 727135 (2009) https://doi.org/10.1117/12.814004

KEYWORDS: Electrodes, Plasma, Extreme ultraviolet, Semiconducting wafers, Mirrors, Extreme ultraviolet lithography, EUV optics, Optical alignment, Charge-coupled devices, Visible radiation

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Proceedings Article | 18 March 2009 Paper

Process liability evaluation for EUVL

Proceedings Volume 7271, 727120 (2009) https://doi.org/10.1117/12.813484

KEYWORDS: Photomasks, Critical dimension metrology, Extreme ultraviolet lithography, Point spread functions, Semiconducting wafers, Logic, Lithography, Electronic design automation, Projection systems, Mask making

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Proceedings Article | 18 March 2009 Paper

Recent progress of EUV full-field exposure tool in Selete

Kazuo Tawarayama, Hajime Aoyama, Shunko Magoshi, Yuusuke Tanaka, Seiichiro Shirai, Hiroyuki Tanaka

Proceedings Volume 7271, 727118 (2009) https://doi.org/10.1117/12.813627

KEYWORDS: Extreme ultraviolet lithography, Semiconducting wafers, Optical alignment, Lithography, Overlay metrology, Semiconductors, Manufacturing, Extreme ultraviolet, Metals, Image processing

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Proceedings Article | 21 March 2008 Paper

Evaluation result of Selete's exposure tool: impact of the source performance

Kazuo Tawarayama, Shunko Magoshi, Hajime Aoyama, Yuusuke Tanaka, Seiichiro Shirai, Hiroyuki Tanaka

Proceedings Volume 6921, 69212V (2008) https://doi.org/10.1117/12.771891

KEYWORDS: Electrodes, Extreme ultraviolet, Semiconducting wafers, Lithography, Plasma, Extreme ultraviolet lithography, Mirrors, Manufacturing, Xenon, Semiconductors

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Proceedings Article | 21 March 2008 Paper

Effects of aberration and flare on lithographic performance of SFET

Yuusuke Tanaka, Hajime Aoyama, Kazuo Tawarayama, Shunko Magoshi, Seiichiro Shirai, Hiroyuki Tanaka

Proceedings Volume 6921, 69211D (2008) https://doi.org/10.1117/12.771626

KEYWORDS: Point spread functions, Lithography, Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Projection systems, Line width roughness, Mirrors, Surface roughness, Optical testing

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Proceedings Article | 6 May 2005 Paper

Study of EB-tree

Kazuo Tawarayama, Shunko Magoshi, Shinji Sato, Masayuki Hatano

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.598923

KEYWORDS: Semiconducting wafers, Metals, Backscatter, Electron beam lithography, Copper, Lithography, Electron beam direct write lithography, Monte Carlo methods, Critical dimension metrology, Tungsten

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Proceedings Article | 28 May 2004 Paper

Method of robust pattern design for lens aberration

Nobuhiro Komine, Kenji Konomi, Keita Asanuma, Kazuo Tawarayama, Tatsuhiko Higashiki

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536244

KEYWORDS: Diffraction, SRAF, Lens design, Critical dimension metrology, Monochromatic aberrations, Semiconducting wafers, Semiconductors, Light sources, Scanning electron microscopy, Image acquisition

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Proceedings Article | 16 June 2003 Paper

Proximity effect correction on multilevel interconnect metal for high-energy electron-beam lithography

Shunko Magoshi, Shinji Sato, Kazuo Tawarayama, Yasuhiro Makino, Hiromi Niiyama

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.483741

KEYWORDS: Metals, Backscatter, Electron beam lithography, Lithography, Silicon, Tungsten, Modulation, Monte Carlo methods, Microelectronics, Aluminum

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Proceedings Article | 26 July 1999 Paper

Higher-order aberration measurement with printed patterns under extremely reduced sigma illumination

Hiroshi Nomura, Kazuo Tawarayama, Takuya Kohno

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354348

KEYWORDS: Monochromatic aberrations, Zernike polynomials, Semiconducting wafers, Inspection, Lithography, Lithographic illumination, Overlay metrology, Excimer lasers, Laser scanners, 3D scanning

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Showing 5 of 22 publications

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