High performance pulsed AlGaAs/GaAs wide stripe diode laser has been developed for the automotive distance-measuring scanning radar sensor. The laser diode is required high output power of 15 W and a long time reliability in spite of being used in a harsh environment such as wide temperature range, mechanical vibrations at the front bumper and so on. The device is designed by employing a multiple quantum well structure as an active layer for high output power with low drive current and high temperature operations. Moreover we reduce catastrophic optical damage power level and control the beam divergence angle by introducing optimized optical waveguide layers. In the chips bonding part, we developed a new thin film Au-Sn-Ni solder system. The bonding temperature can be lowered by using this system, whereby the thermal damage to the laser diode can be reduced. Furthermore, highly stable bonding is carried out by improving wetting ability in this system. We have achieved more than 22 W light output power at 20A pulse current under room temperature and more than 16 W light output power under 90 degrees Celsius. High reliability over 10,000 hours is performed for automotive use under pulsed operation at 90 degrees Celsius, 50 ns pulse width, 8 kHz frequency and 15 W light output power.
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