Dr. Jun Yuan Profile

Dr. Jun Yuan

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Proceedings Article | 5 November 2020 Paper

Effects of composition-graded AlGaN/GaN/AlGaN electron blocking layer on photoelectric performance in InGaN laser diodes

Wenjie Wang, Mingle Liao, Jun Yuan, Siyuan Luo

Proceedings Volume 11564, 1156405 (2020) https://doi.org/10.1117/12.2579741

KEYWORDS: Semiconductor lasers, Indium gallium nitride, Quantum wells, Gallium nitride, Refractive index, Waveguides

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Herein, the optical and electrical property improvements of the InGaN MQW laser diode with an emission wavelength around 410 n1m are theoretically investigated by tuning the composition of AlGaN/GaN/AlGaN EBL, which is achieved with the simulation software Crosslight. The simulation results show that, compared with the reference structure (p-Al_0.2Ga_0.8N EBL), composition-graded AlGaN/GaN/AlGaN EBL structure A can increase the electron concentration in the quantum well, and ultimately increase the laser power, in which the Al content of EBL decreased from 0.2 to 0.05 along the growth direction. On the one hand, the height of EBL itself does not decrease compared to reference structure. On the other hand, gradually decreasing the Al content can reduce the polarization effect of the overall EBL, further increase the barrier height of EBL to electrons, resulting in reduced leakage current from 14.5% to 4.8% and increased output power by 0.28 times. For structure B, the EBL Al content increases from 0.05 to 0.2 in the growth direction, the barrier height of the EBL is significantly reduced, and a large amount of electrons leak into the EBL and p-GaN regions, resulting in an increase in leakage current. Therefore, the efficiency is significantly reduced compared to the structure A. The AlGaN/GaN/AlGaN composite EBL with gradually decreasing Al composition is an effective method to increase output power and suppress electron leakage in InGaN lasers.

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