Graphene-Si heterojunction devices have been widely studied in the field of photoelectric detection, solar cells and sensors areas. However, optical modulation devices based on graphene-Si heterojunction have been rarely reported. Herein, we analyze the photoelectric performance of the graphene-Si heterojunction at different laser powers. The Fermi level of the graphene can be tuned as the photo-excited holes in Si diffuse into the graphene. For the hybrid Si-graphene waveguide modulator, the maximum modulation efficiency of 279.3 dB/cm is achieved at 1550 nm by using finite element analysis method. We hope that the study of the graphene-Si heterojunction can provide a way for application in hybrid graphene-Si waveguide modulators.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.