Thin films have been widely used in advanced high-technology manufacturing processes such as semiconductors, displays, and batteries. A representative method among non-destructive thickness measurement methods is a spectral reflectometer. An optical layout of the spectral reflectometer is compact with only a few optical components, and a mathematical model for analysis is also relatively simple. However, in order to find a thickness solution based on the model-based analysis, an initial value should be well chosen to cover. In addition, the analysis time takes longer for improving the thickness resolution due to large numbers of comparison. To overcome this practical difficulty, an artificial neural network algorithm with several different conditions such as number of hidden layers and nodes were designed and trained within a thickness range around 100 nm. The training data set and the validation data set were used by theoretically generating an interference spectrum based on the Fresnel equation. In this work, the spectral reflectometer was realized in a wavelength range of 355 nm to 657 nm based on our previous work. For quantitative analysis in this measurement, certified reference materials having a nominal thickness of 10 nm, 30 nm, 50 nm, and 100 nm silicon dioxide thin film was measured, and an uncertainty analysis was performed on the thickness measurement value determined through this. Uncertainty factors include measurement uncertainties related to the calibration of the spectral reflectometer in use, measurement repeatability, and artificial neural network algorithms.
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