Mr. Johan Venter Profile

Johan Venter

PhD Student and Full-time Lecturer at Univ of Johannesburg

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Author

Publications (5)

Proceedings Article | 24 January 2019 Paper

Protection against transient overvoltage in precision AC-DC transfer measurement system

Thato Kgakatsi, Eugene Golovins, Johan Venter, Dan Nicolae

Proceedings Volume 11043, 110430X (2019) https://doi.org/10.1117/12.2501142

KEYWORDS: Diodes, Precision measurement, Semiconductors, Control systems, Switching, Calibration, Capacitance, Metrology, Power supplies, Differential equations

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SPIE Journal Paper | 8 November 2018

Characterization of diode-connected heterojunction bipolar transistors for near-infrared detecting applications

Johan Venter, Saurabh Sinha, Wynand Lambrechts

OE, Vol. 57, Issue 11, 117104, (November 2018) https://doi.org/10.1117/12.10.1117/1.OE.57.11.117104

KEYWORDS: Capacitance, Resistance, Diodes, Transistors, Silicon, Heterojunctions, Germanium, Sensors, Prototyping, Doping

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Proceedings Article | 3 February 2017 Paper

Characterisation of diode-connected SiGe BiCMOS HBTs for space applications

Johan Venter, Saurabh Sinha, Wynand Lambrechts

Proceedings Volume 10036, 1003613 (2017) https://doi.org/10.1117/12.2244596

KEYWORDS: Transistors, Cryogenics, Silicon, Diodes, Temperature metrology, Capacitance, Liquids, Nitrogen, Photodetectors, Infrared radiation

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Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high current gain and low-output resistance due to its vertical profile, BiCMOS technology is increasingly becoming a preferred technology for researchers to realise next-generation space-based optoelectronic applications. BiCMOS transistors have inherent radiation hardening, to an extent predictable cryogenic performance and monolithic integration potential.

SiGe BiCMOS transistors and p-n junction diodes have been researched and used as a primary active component for over the last two decades. However, further research can be conducted with diode-connected heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. This work investigates these characteristics and models devices by adapting standard fabrication technology components.

This work focuses on measurements of the current-voltage relationship (I-V curves) and capacitance-voltage relationships (C-V curves) of diode-connected HBTs. One configuration is proposed and measured, which is emitterbase shorted. The I-V curves are measured for various temperature points ranging from room temperature (300 K) to the temperature of liquid nitrogen (77 K). The measured datasets are used to extract a model of the formed diode operating at cryogenic temperatures and used as a standard library component in computer aided software designs.

The advantage of having broad-range temperature models of SiGe transistors becomes apparent when considering implementation of application-specific integrated circuits and silicon-based infrared radiation photodetectors on a single wafer, thus shortening interconnects and lowering parasitic interference, decreasing the overall die size and improving on overall cost-effectiveness. Primary applications include space-based geothermal radiation sensing and cryogenic terahertz radiation sensing.

Proceedings Article | 23 June 2014 Paper

Thermal and flicker noise improvement in short-channel CMOS detectors

Johan Venter, Saurabh Sinha

Proceedings Volume 9257, 92570Q (2014) https://doi.org/10.1117/12.2064735

KEYWORDS: Sensors, Field effect transistors, Infrared detectors, Sensor performance, Molybdenum, Transistors, CMOS sensors, CMOS technology, Diffusion, Capacitance

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SPIE Journal Paper | 3 April 2013

Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology

Johan Venter, Saurabh Sinha

OE, Vol. 52, Issue 04, 044001, (April 2013) https://doi.org/10.1117/12.10.1117/1.OE.52.4.044001

KEYWORDS: Sensors, Silicon, CCD image sensors, Germanium, Infrared detectors, Charge-coupled devices, Diodes, Quantum efficiency, Infrared sensors, Doping

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