The GaAs-based HEMT device is prepared by MBE. The device resistance is 300Ω. The structure size of the bow-tie antenna is simulated and optimized with HFSS. The optimization process uses a lumped source feed to realize the impedance matching of the bow-tie antenna and the two-dimensional electron gas (2DEG) channel. The optimized antenna gain can reach 6dB and the voltage standing wave ratio (VSWR) is 1.35. The VDI company 0.3THz terahertz source is used to measure the device. The measurement results show that the device has good polarization characteristics, the signal to noise ratio (SNR) is 80, the detection response rate is 5.11V/W, and the response rate is in the same order of magnitude as the theoretical calculation.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.