To discuss the preparation technology of ultra-thin Polyimide (PI)/ Zirconium (Zr) self-standing composite film. Polyamide acid (PAA) solution was synthesized with 4,4'- diaminodiphenyl ether (ODA) and pyromellitic dianhydride (PMDA) as monomers. PI films were obtained by gradient temperature rise thermal imidization. A PI self-supporting film with a thickness of about 600 nm was obtained by the corrosion of ZnO release agent with dilute hydrochloric acid. After it was fixed in a copper frame with a diameter of 15 mm, a Zr film with a thickness of about 200 nm was deposited on it by direct-current magnetron sputtering. The composite film with a thickness of about 600 nm PI/200 nm Zr was obtained. PI film increased the mechanical properties of self-supporting Zr filter film, but in order to reduce the influence of PI film on the transmittance of Zr filter film, PI film was etched and thinned by excimer laser, and the thickness of 200 nm PI/ 200 nm Zr self-supporting filter film was prepared. This method deposited 200 nm Zr film on 600 nm self-supporting PI film, and then etched part of the PI film. 160 pulses were etched with excimer laser energy density of 40 mJ/cm2 and 26 pulses were etched with 70 mJ / cm2, and 200 nm PI /200 nm Zr self-supporting composite filter film was acquired respectively.
To discuss the effect of aluminum-doped zinc oxide (AZO)sine grating with a random rough surface on the absorption and reflectivity of thin film silicon solar cells. The random rough surface was expressed with Correlation length (Cor_ l) and Average height (Ave_ h), and superimposed on the one-dimensional AZO sine grating with 980 nm period and 160 nm groove height. Random rough surface AZO gratings were used as the front electrode of thin film silicon solar cells with 1000 nm silicon absorption layer thickness. Theoretical simulation results showed that the influence of Cor_ l on the reflectivity was smaller than that of Ave_ h. Moreover, high specular reflection acquired in the range of Cor_ l 0.011~0.015 and Ave_ h 0.2-0.8. When the Cor_ l was fixed, the diffuse reflection decreased with the increase of the Ave_ h. Results of the solar cell absorption showed that the thin film silicon solar cell with Ave_ h in the range of 0.2 ~ 0.8 had strong absorption at 440 ~ 500 nm, 575 ~ 710 nm, 740 ~ 755 nm and 795 ~ 815 nm wavelength band as the Cor_ l was 0.01. In the aspect of experiment fabrication, random rough surface AZO grating and smooth surface AZO grating was fabricated with wet etching and lift-off process respectively. It was suggested that as front electrode, random rough surface AZO grating with smaller Cor_ l and larger Ave_ h could suppress reflection and enhance absorption, so as to improve light trapping efficiency of the thin film silicon solar cells.
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